Shenzhen Koben Electronics Co., Ltd.
| Payment Terms | T/T, Western Union, Paypal |
| Supply Ability | 10000 pieces per year |
| Delivery Time | 1-2 working days |
| Packaging Details | factory standard packing |
| Condition | 100% Brand New Product |
| Part Status | Active |
| Package | H2M |
| Lead Free Status / RoHS Status | Compliant |
| Output Power | 60W |
| Voltage | 12.5V |
| Brand Name | Mitsubishi |
| Model Number | RA60H4452M1-101 |
| Certification | IEC |
| Place of Origin | JP |
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Product Specification
| Payment Terms | T/T, Western Union, Paypal | Supply Ability | 10000 pieces per year |
| Delivery Time | 1-2 working days | Packaging Details | factory standard packing |
| Condition | 100% Brand New Product | Part Status | Active |
| Package | H2M | Lead Free Status / RoHS Status | Compliant |
| Output Power | 60W | Voltage | 12.5V |
| Brand Name | Mitsubishi | Model Number | RA60H4452M1-101 |
| Certification | IEC | Place of Origin | JP |
| High Light | high power mosfet transistors ，n channel transistor | ||
RA60H4452M1-101 440-520MHz 60W 12.5V, 2 Stage Amp. Power Transistor For MOBILE RADIO
DESCRIPTION
The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum). At VGG=5V, the typical gate currents are 5mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power
FEATURES
1, Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
2, Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
3, Broadband Frequency Range: 440-520MHz
4, Metal shield structure that makes the improvements of spurious radiation simple
5, Low-Power Control Current IGG=5mA (typ) @ VGG=5V
6, Module Size: 67 x 18 x 9.9 mm
7, Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.
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Company Details
Business Type:
Distributor/Wholesaler
Year Established:
1995
Ecer Certification：
Site Member
Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen. The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc... Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen. The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc...
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