Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 8500pcs |
Delivery Time | 1 day |
Packaging Details | Please contact me for details |
Pulsed Drain Current | 700 A |
Maximum Power Dissipation | 300 W |
Linear Derating Factor | 2.0 W/°C |
Gate-to-Source Voltage | ± 20 V |
Operating Junction and Storage Temperature | -55 to + 175°C |
Soldering Temperature, for 10 seconds | 300°C (1.6mm from case ) |
Brand Name | Anterwell |
Model Number | IRF2907ZS-7PPBF |
Certification | new & original |
Place of Origin | original factory |
View Detail Information
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Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 8500pcs |
Delivery Time | 1 day | Packaging Details | Please contact me for details |
Pulsed Drain Current | 700 A | Maximum Power Dissipation | 300 W |
Linear Derating Factor | 2.0 W/°C | Gate-to-Source Voltage | ± 20 V |
Operating Junction and Storage Temperature | -55 to + 175°C | Soldering Temperature, for 10 seconds | 300°C (1.6mm from case ) |
Brand Name | Anterwell | Model Number | IRF2907ZS-7PPBF |
Certification | new & original | Place of Origin | original factory |
High Light | power mosfet ic ,multi emitter transistor |
IRF2907ZS-7PPbF
HEXFET® Power MOSFET
Features
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for high current, high reliability applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low on-resistance and world -class current ratings. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Server & Telecom OR'ing, Automotive and low voltage Motor Drive Applications.
Absolute Maximum Ratings
Parameter | Max | Units | |
---|---|---|---|
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 180 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V (See Fig. 9) | 120 | A |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) | 160 | A |
IDM | Pulsed Drain Current | 700 | A |
PD @TC = 25°C | Maximum Power Dissipation | 300 | W |
Linear Derating Factor | 2.0 | W/°C | |
VGS | Gate-to-Source Voltage | ± 20 | V |
EAS | Single Pulse Avalanche Energy (Thermally Limited) | 160 | mJ |
EAS (tested) | Single Pulse Avalanche Energy Tested Value | 410 | mJ |
IAR | Avalanche Current | See Fig.12a,12b,15,16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
TJ , TSTG | Operating Junction and Storage Temperature Range | -55 to + 175 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | °C | |
Mounting torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) | °C |
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Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification:
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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