New & Original Industry Standard Single Channel 6 Pin DIP Optocoupler 4N35

Product Specification

Industry Standard Single Channel 6 Pin DIP Optocoupler

DEVICE TYPES

Part No.    CTR % Min.        Part No.     CTR % Min.

4N25          20                     MCT2             20

4N26          20                     MCT2E           20

4N27          10                     MCT270         50

4N28          10                     MCT271        45–90

4N35          100                   MCT272        75–150

4N36          100                   MCT273        125–250

4N37          100                   MCT274         225–400

4N38          10                     MCT275         70–90

H11A1        50                     MCT276         15–60

H11A2        20                     MCT277          100

H11A3        20

H11A4        10

H11A5        30

FEATURES

• Interfaces with Common Logic Families

• Input-output Coupling Capacitance < 0.5 pF

• Industry Standard Dual-in-line 6-pin Package

• Field Effect Stable by TRIOS®

• 5300 VRMS Isolation Test Voltage

• Underwriters Laboratory File #E52744

• VDE #0884 Approval Available with Option 1

APPLICATIONS

• AC Mains Detection

• Reed Relay Driving

• Switch Mode Power Supply Feedback

• Telephone Ring Detection

• Logic Ground Isolation

• Logic Coupling with High Frequency Noise Rejection

Notes: Designing with data sheet is covered in Application Note 45.

DESCRIPTION

This data sheet presents five families of Vishay Industry Standard Single Channel Phototransistor Couplers. These families include the 4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/ A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/ 277 devices.Each optocoupler consists of Gallium Arsenide infrared LED and a silicon NPN phototransistor.

These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS Isolation Test Voltage. This isolation performance is accomplished through Vishay double molding isolation manufacturing process. Compliance to VDE 0884 partial discharge isolation specification is available for these families by ordering option 1. Phototransistor gain stability, in the presence of high isolation voltages, is insured by incorporating a TRansparent lOn Shield (TRIOS)® on the phototransistor substrate. These isolation processes and the Vishay IS09001 Quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler.

The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.

Maximum Ratings TA=25°C

Emitter

Reverse Voltage .......................................................................................... 6.0 V

Forward Current ........................................................................................ 60 mA

Surge Current (t≤10 µs)............................................................................... 2.5 A

Power Dissipation................................................................................... 100 mW

Detector

Collector-Emitter Breakdown Voltage........................................................... 70 V

Emitter-Base Breakdown Voltage................................................................ 7.0 V

Collector Current ....................................................................................... 50 mA

Collector Current(t <1.0 ms).................................................................... 100 mA

Power Dissipation................................................................................... 150 mW

Package

Isolation Test Voltage.......................................................................... 5300 V_RMS

Creepage .............................................................................................. ≥7.0 mm

Clearance ............................................................................................. ≥7.0 mm

Isolation Thickness between Emitter and Detector............................... ≥0.4 mm

Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175

Isolation Resistance

    V_IO=500 V, T_A=25°C...............................................................................10¹² Ω

    V_IO=500 V, T_A=100°C............................................................................ 10¹¹ Ω

Storage Temperature................................................................ –55°C to +150°C

Operating Temperature ............................................................ –55°C to +100°C

Junction Temperature................................................................................ 100°C

Soldering Temperature (max. 10 s, dip soldering:

    distance to seating plane ≥1.5 mm) ...................................................... 260°C