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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
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China Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568
China Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568

  1. China Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568

Silicon N Channel MOS Type Switching Regulator Power Mosfet Transistor 2SK3568

  1. MOQ: 20pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Drain-source voltage 500 V
Drain-gate voltage (RGS = 20 kΩ) 500 V
Gate-source voltage ±30 V
Drain power dissipation (Tc = 25°C) 40 W
Single pulse avalanche energy 364 mJ
Avalanche current 12 A
Channel temperature 150 °C
Storage temperature range -55~150 °C
Brand Name Anterwell
Model Number 2SK3568
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 10000pcs
Delivery Time 1 day Packaging Details Please contact me for details
Drain-source voltage 500 V Drain-gate voltage (RGS = 20 kΩ) 500 V
Gate-source voltage ±30 V Drain power dissipation (Tc = 25°C) 40 W
Single pulse avalanche energy 364 mJ Avalanche current 12 A
Channel temperature 150 °C Storage temperature range -55~150 °C
Brand Name Anterwell Model Number 2SK3568
Certification new & original Place of Origin original factory
High Light multi emitter transistorsilicon power transistors

 

TOSHIBA Field Effect Transistor

Silicon N Channel MOS Type (π-MOSVI) 2SK3568

 

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.)

• High forward transfer admittance: |Yfs| = 8.5S (typ.)

• Low leakage current: IDSS = 100 μA (VDS = 500 V)

• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

Weight : 1.7 g (typ.)

 

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit
Drain−source voltage VDSS 900 V
Drain−gate voltage (RGS = 20 kΩ) VDGR 900 V
Gate−source voltage VGSS ±30 V
Drain current DC (Note 1) ID 9 A
Pulse (Note 1) IDP 27 A
Drain power dissipation (Tc = 25°C) PD 150 W
Single pulse avalanche energy (Note 2) EAS 663 mJ
Avalanche current IAR 9 A
Repetitive avalanche energy (Note 3) EAR 15 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C
 

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

 

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Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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