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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
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China FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
China FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

  1. China FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

FGA25N120ANTD Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

  1. MOQ: 10 pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 4800pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Collector-Emitter Voltage 1200 V
Gate-Emitter Voltage ± 20 V
Pulsed Collector Current 90 A
Diode Maximum Forward Current 150 A
Operating Junction Temperature -55 to +150 °C
Storage Temperature Range -55 to +150 °C
Brand Name Anterwell
Model Number FGA25N120ANTD
Certification new & origianl
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 4800pcs
Delivery Time 1 day Packaging Details Please contact me for details
Collector-Emitter Voltage 1200 V Gate-Emitter Voltage ± 20 V
Pulsed Collector Current 90 A Diode Maximum Forward Current 150 A
Operating Junction Temperature -55 to +150 °C Storage Temperature Range -55 to +150 °C
Brand Name Anterwell Model Number FGA25N120ANTD
Certification new & origianl Place of Origin original factory
High Light npn smd transistormulti emitter transistor

 

FGA25N120ANTD/FGA25N120ANTD_F109

1200V NPT Trench IGBT

 

Features

• NPT Trench Technology, Positive temperature coefficient

• Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C

• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C

• Extremely enhanced avalanche capability

 

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

 

 

Absolute Maximum Ratings

Symbol Description FGA25N120ANTD Units
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ± 20 V
IC Collector Current @ TC = 25°C 50 A
Collector Current @ TC = 100°C 25 A
ICM Pulsed Collector Current (Note 1) 90 A
IF Diode Continuous Forward Current @ TC = 100°C 25 A
IFM Diode Maximum Forward Current 150 A
PD Maximum Power Dissipation @ TC = 25°C 312 W
Maximum Power Dissipation @ TC = 100°C 125 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TL

Maximum Lead Temp. for soldering Purposes,

1/8” from case for 5 seconds

300 °C

 

 

Mechanical Dimensions

 

                                                           TO-3PN

 

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Reach Us
  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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