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China factory - Anterwell Technology Ltd.

Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
  • Site Member

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China SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™
China SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™

  1. China SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™

SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 8700pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Drain-source breakdown voltage 600 V
Drain-Source avalanche breakdown voltage 700 V
Gate threshold voltage 3 V
Zero gate voltage drain current (Tj =25°C) 0.5 µA
Gate-source leakage current 100 nA
Gate input resistance 0.95 Ω
Brand Name Anterwell
Model Number SPA04N60C3
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 8700pcs
Delivery Time 1 day Packaging Details Please contact me for details
Drain-source breakdown voltage 600 V Drain-Source avalanche breakdown voltage 700 V
Gate threshold voltage 3 V Zero gate voltage drain current (Tj =25°C) 0.5 µA
Gate-source leakage current 100 nA Gate input resistance 0.95 Ω
Brand Name Anterwell Model Number SPA04N60C3
Certification new & original Place of Origin original factory
High Light npn smd transistorsilicon power transistors

 
SPP04N60C3, SPB04N60C3
Final data SPA04N60C3
 
Cool MOSô Power Transistor
 

VDS @ Tjmax650V
RDS(on)0.95
ID4.5A

Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
 
  P-TO220-3-31          P-TO263-3-2           P-TO220-3-1

 
Maximum Ratings

ParameterSymbolValueUnit
SPP_BSPA

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

 

4.5

2.8

 

4.51)

2.81)

A
Pulsed drain current, tp limited by TjmaxID puls13.513.5A
Avalanche energy, single pulse ID=3.4, VDD=50VEAS130130mJ
Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50VEAR0.40.4mJ
Avalanche current, repetitive tAR limited by TjmaxIAR4.54.5A
Gate source voltage staticVGS±20±20V
Gate source voltage AC (f >1Hz)VGS±30±30 
Power dissipation, TC = 25°CPtot5031W
Operating and storage temperatureTj , Tstg-55...+150°C

Drain Source voltage slope
VDS = 480 V, ID = 4.5 A, Tj = 125 °C

dv/dt50V/ns

 
P-TO-220-3-1

 
P-TO-263-3-2 (D2-PAK)

 
P-TO-220-3-31 (FullPAK)

 
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Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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Get in touch with us

  • Reach Us
  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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