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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
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China P4NK60ZFP Power Mosfet Transistor high power mosfet transistors
China P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

  1. China P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

P4NK60ZFP Power Mosfet Transistor high power mosfet transistors

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 8760pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Drain-source Voltage 600 V
Drain-gate Voltage 600 V
Gate- source Voltage ± 30 V
Peak Diode Recovery voltage slope 4.5 V/ns
Insulation Withstand Voltage 2500 V
Operating Junction Temperature -55 to 150 °C
Brand Name Anterwell
Model Number P4NK60ZFP
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 8760pcs
Delivery Time 1 day Packaging Details Please contact me for details
Drain-source Voltage 600 V Drain-gate Voltage 600 V
Gate- source Voltage ± 30 V Peak Diode Recovery voltage slope 4.5 V/ns
Insulation Withstand Voltage 2500 V Operating Junction Temperature -55 to 150 °C
Brand Name Anterwell Model Number P4NK60ZFP
Certification new & original Place of Origin original factory
High Light power mosfet icmulti emitter transistor

 

Stock Offer (Hot Sell)

Part No. Quantity Brand D/C Package
MAX191BCWG+ 2338 MAXIM 16+ SOIC-24
MAX1932ETC+T 3044 MAXIM 13+ QFN
MAX232EIDR 50000 TI 13+ SOP-16
MAX232IDW 9003 TI 11+ SOP-16
MAX253CSA+ 6562 MAXIM 14+ SOP-8
MAX3051EKA+T 3853 MAXIM 14+ SOT-23
MAX3061EEKA 4024 MAXIM 15+ SOT23-8
MAX3070EESD 5557 MAXIM 16+ SOP-14
MAX31865ATP+T 3707 MAXIM 16+ QFN20
MAX3221ECPWR 3059 TI 16+ TSSOP
MAX3224ECAP 4095 MAXIM 16+ SSOP-20
MAX3232CPWR 5697 TI 16+ TSSOP
MAX3232CUE 3986 MAXIM 16+ TSSOP
MAX3232EIDR 3667 TI 16+ SOP-16
MAX3238ECPWR 8331 TI 10+ TSSOP
MAX3243CDBR 3590 TI 14+ SSOP-28
MAX3243ECDBR 6741 TI 09+ SSOP-28
MAX32590-LNJ+ 553 MAXIM 13+ NA
MAX3311CUB 2302 MAXIM 16+ MSOP-10
MAX3311EEUB 2324 MAXIM 16+ MSOP-10
MAX3442EEPA+ 3095 MAXIM 16+ DIP-8
MAX3442EESA+T 5829 MAXIM 16+ SOP-8
MAX3486CSA 15889 MAXIM 16+ SOP-8
MAX3490CSA+ 11077 MAXIM 13+ SOP-8
MAX4080SASA+T 15089 MAXIM 16+ SOP-8
MAX418CPD 3034 MAXIM 14+ DIP-14
MAX4624EZT 15171 MAXIM 16+ SOT23-6
MAX4663CAE 2151 MAXIM 16+ SSOP-16
MAX472CPA 4115 MAXIM 15+ DIP-8
MAX491CPD+ 14840 MAXIM 16+ DIP-14

 

 

STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1

STB4NK60Z-STD4NK60Z-STD4NK60Z-1

 

N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK

Zener-Protected SuperMESH™Power MOSFET

 

■ TYPICAL RDS(on) = 1.76 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING REPEATIBILITY

 

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

 

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

■ LIGHTING

 

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP4NK60Z

STB4NK60Z

STB4NK60Z-1

STP4NK60ZFP

STD4NK60Z

STD4NK60Z-1

VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 4 4 (*) 4 A
ID Drain Current (continuous) at TC = 100°C 2.5 2.5 (*) 2.5 A
IDM (•) Drain Current (pulsed) 16 16 (*) 16 A
PTOT Total Dissipation at TC = 25°C 70 25 70 W
  Derating Factor 0.56 0.2 0.56 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC) - 2500 - V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

-55 to 150

°C

(•) Pulse width limited by safe operating area

(1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

 

 

 

 

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Reach Us
  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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