Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 8760pcs |
Delivery Time | 1 day |
Packaging Details | Please contact me for details |
Drain-source Voltage | 600 V |
Drain-gate Voltage | 600 V |
Gate- source Voltage | ± 30 V |
Peak Diode Recovery voltage slope | 4.5 V/ns |
Insulation Withstand Voltage | 2500 V |
Operating Junction Temperature | -55 to 150 °C |
Brand Name | Anterwell |
Model Number | P4NK60ZFP |
Certification | new & original |
Place of Origin | original factory |
View Detail Information
Explore similar products
GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR
71004SB Power Mosfet Transistor IC Chip China supplier Integared Circuit
TOP244YN TOPSwitch-GX Family Extended Power, Design Flexible, EcoSmart,
LE50A Very low drop voltage regulators with inhibit complementary power mosfet
Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 8760pcs |
Delivery Time | 1 day | Packaging Details | Please contact me for details |
Drain-source Voltage | 600 V | Drain-gate Voltage | 600 V |
Gate- source Voltage | ± 30 V | Peak Diode Recovery voltage slope | 4.5 V/ns |
Insulation Withstand Voltage | 2500 V | Operating Junction Temperature | -55 to 150 °C |
Brand Name | Anterwell | Model Number | P4NK60ZFP |
Certification | new & original | Place of Origin | original factory |
High Light | power mosfet ic ,multi emitter transistor |
Stock Offer (Hot Sell)
Part No. | Quantity | Brand | D/C | Package |
MAX191BCWG+ | 2338 | MAXIM | 16+ | SOIC-24 |
MAX1932ETC+T | 3044 | MAXIM | 13+ | QFN |
MAX232EIDR | 50000 | TI | 13+ | SOP-16 |
MAX232IDW | 9003 | TI | 11+ | SOP-16 |
MAX253CSA+ | 6562 | MAXIM | 14+ | SOP-8 |
MAX3051EKA+T | 3853 | MAXIM | 14+ | SOT-23 |
MAX3061EEKA | 4024 | MAXIM | 15+ | SOT23-8 |
MAX3070EESD | 5557 | MAXIM | 16+ | SOP-14 |
MAX31865ATP+T | 3707 | MAXIM | 16+ | QFN20 |
MAX3221ECPWR | 3059 | TI | 16+ | TSSOP |
MAX3224ECAP | 4095 | MAXIM | 16+ | SSOP-20 |
MAX3232CPWR | 5697 | TI | 16+ | TSSOP |
MAX3232CUE | 3986 | MAXIM | 16+ | TSSOP |
MAX3232EIDR | 3667 | TI | 16+ | SOP-16 |
MAX3238ECPWR | 8331 | TI | 10+ | TSSOP |
MAX3243CDBR | 3590 | TI | 14+ | SSOP-28 |
MAX3243ECDBR | 6741 | TI | 09+ | SSOP-28 |
MAX32590-LNJ+ | 553 | MAXIM | 13+ | NA |
MAX3311CUB | 2302 | MAXIM | 16+ | MSOP-10 |
MAX3311EEUB | 2324 | MAXIM | 16+ | MSOP-10 |
MAX3442EEPA+ | 3095 | MAXIM | 16+ | DIP-8 |
MAX3442EESA+T | 5829 | MAXIM | 16+ | SOP-8 |
MAX3486CSA | 15889 | MAXIM | 16+ | SOP-8 |
MAX3490CSA+ | 11077 | MAXIM | 13+ | SOP-8 |
MAX4080SASA+T | 15089 | MAXIM | 16+ | SOP-8 |
MAX418CPD | 3034 | MAXIM | 14+ | DIP-14 |
MAX4624EZT | 15171 | MAXIM | 16+ | SOT23-6 |
MAX4663CAE | 2151 | MAXIM | 16+ | SSOP-16 |
MAX472CPA | 4115 | MAXIM | 15+ | DIP-8 |
MAX491CPD+ | 14840 | MAXIM | 16+ | DIP-14 |
STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1
STB4NK60Z-STD4NK60Z-STD4NK60Z-1
N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK
Zener-Protected SuperMESH™Power MOSFET
■ TYPICAL RDS(on) = 1.76 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING
ABSOLUTE MAXIMUM RATINGS
Symbol | Parameter | Value | Unit | ||
STP4NK60Z STB4NK60Z STB4NK60Z-1 | STP4NK60ZFP | STD4NK60Z STD4NK60Z-1 | |||
VDS | Drain-source Voltage (VGS = 0) | 600 | V | ||
VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 600 | V | ||
VGS | Gate- source Voltage | ± 30 | V | ||
ID | Drain Current (continuous) at TC = 25°C | 4 | 4 (*) | 4 | A |
ID | Drain Current (continuous) at TC = 100°C | 2.5 | 2.5 (*) | 2.5 | A |
IDM (•) | Drain Current (pulsed) | 16 | 16 (*) | 16 | A |
PTOT | Total Dissipation at TC = 25°C | 70 | 25 | 70 | W |
Derating Factor | 0.56 | 0.2 | 0.56 | W/°C | |
VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5KΩ) | 3000 | V | ||
dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
Tj Tstg | Operating Junction Temperature Storage Temperature | -55 to 150 -55 to 150 | °C |
(•) Pulse width limited by safe operating area
(1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification:
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
Get in touch with us
Leave a Message, we will call you back quickly!