Anterwell Technology Ltd.
| Payment Terms | T/T, Western Union, Paypal |
| Supply Ability | 10000 |
| Delivery Time | 1 day |
| Packaging Details | please contact me for details |
| Material | Plastic Package |
| Collector−Base Voltage | 60 |
| ESD Ratings | Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V |
| Epoxy Meets | UL 94 V−0 @ 0.125 in |
| Brand Name | Anterwell |
| Model Number | 2N6038 |
| Certification | new & original |
| Place of Origin | original factory |
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Product Specification
| Payment Terms | T/T, Western Union, Paypal | Supply Ability | 10000 |
| Delivery Time | 1 day | Packaging Details | please contact me for details |
| Material | Plastic Package | Collector−Base Voltage | 60 |
| ESD Ratings | Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V | Epoxy Meets | UL 94 V−0 @ 0.125 in |
| Brand Name | Anterwell | Model Number | 2N6038 |
| Certification | new & original | Place of Origin | original factory |
| High Light | npn smd transistor ，multi emitter transistor | ||
Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038
Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications.
• High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc
(Min) — 2N6036, 2N6039
• Forward Biased Second Breakdown Current Capability IS/b = 1.5 Adc @ 25 Vdc
• Monolithic Construction with Built–In Base–Emitter Resistors to LimitELeakage Multiplication
• Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic Package
| Rating | Symbol | Value | Unit |
| Collector−Emitter Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039 | VCEO | 40 60 80 | Vdc |
| Collector−Base Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039 | VCBO | 40 60 80 | Vdc |
| Emitter−Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current Continuous Peak | IC | 4.0 8.0 | Adc Apk |
| Base Current | IB | 100 | mAdc |
| Total Device Dissipation @ TC = 25°C Derate above 25°C | PD | 40 320 | W mW/°C |
| Total Device Dissipation @ TC = 25°C Derate above 25°C | PD | 1.5 12 | W mW/°C |
| Operating and Storage Junction Temperature Range | TJ, Tstg | –65 to +150 | °C |
| Characteristic | Symbol | Max | Unit |
| Thermal Resistance, Junction−to−Case | RJC | 3.12 | °C/W |
| Thermal Resistance, Junction−to−Ambient | RJA | 83.3 | °C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
| Characteristic | Symbol | Min | Max | Unit |
| OFF CHARACTERISTICS | ||||
| Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) 2N6034 2N6035, 2N6038 2N6036, 2N6039 | VCEO(sus) | 40 60 80 | -- -- -- | Vdc |
| Collector−Cutoff Current (VCE = 40 Vdc, IB = 0) 2N6034 (VCE = 60 Vdc, IB = 0) 2N6035, 2N6038 (VCE = 80 Vdc, IB = 0) 2N6036, 2N6039 | ICEO | -- -- -- | 100 100 100 | uA |
| Collector−Cutoff Current (VCE = 40 Vdc, VBE(off) = 1.5 Vdc) 2N6034 (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6035, 2N6038 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N6036, 2N6039 (VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6034 (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6035, 2N6038 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6036, 2N6039 | ICEX | -- -- -- -- -- -- | 100 100 100 500 500 500 | uA |
| Collector−Cutoff Current (VCB = 40 Vdc, IE = 0) 2N6034 (VCB = 60 Vdc, IE = 0) 2N6035, 2N6038 (VCB = 80 Vdc, IE = 0) 2N6036, 2N6039 | ICBO | -- -- -- | 0.5 0.5 0.5 | mAdc |
| Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0) | IEBO | -- | 2.0 | mAdc |
| ON CHARACTERISTICS | ||||
| DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) | hFE | 500 750 100 | -- 15,000 -- | -- |
| Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) (IC = 4.0 Adc, IB = 40 mAdc) | VCE(sat) | -- -- | 2.0 3.0 | Vdc |
| Base−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 40 mAdc) | VBE(sat) | -- | 4.0 | Vdc |
| Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) | VBE(on) | -- | 2.8 | Vdc |
| DYNAMIC CHARACTERISTICS | ||||
| Small−Signal Current−Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) | |hfe| | 25 | -- | -- |
| Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6034, 2N6035, 2N6036 2N6038, 2N6039 | Cob | -- -- | 200 100 | pF |
*Indicates JEDEC Registered Data.
Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification：
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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