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China 2SC5171 Audio Power Amplifier IC Transistor Silicon NPN Epitaxial Type 200 MHz
China 2SC5171 Audio Power Amplifier IC Transistor Silicon NPN Epitaxial Type 200 MHz

  1. China 2SC5171 Audio Power Amplifier IC Transistor Silicon NPN Epitaxial Type 200 MHz

2SC5171 Audio Power Amplifier IC Transistor Silicon NPN Epitaxial Type 200 MHz

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union,Paypal
Supply Ability 100000pcs
Delivery Time 1-3Days
Packaging Details BOX
Description Bipolar (BJT) Transistor NPN 180 V 2 A 200MHz 2 W Through Hole TO-220NIS
Type Amplifiers Chip IC
Application Power Amplifier Applications
Package 3 Pins DIP
Feature High transition frequency
Wide Bandwidth 200 MHz
Series Complementary to 2SA1930
Brand Name TOSHIBA
Model Number 2SC5171
Certification ROHS
Place of Origin Original Factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union,Paypal Supply Ability 100000pcs
Delivery Time 1-3Days Packaging Details BOX
Description Bipolar (BJT) Transistor NPN 180 V 2 A 200MHz 2 W Through Hole TO-220NIS Type Amplifiers Chip IC
Application Power Amplifier Applications Package 3 Pins DIP
Feature High transition frequency Wide Bandwidth 200 MHz
Series Complementary to 2SA1930 Brand Name TOSHIBA
Model Number 2SC5171 Certification ROHS
Place of Origin Original Factory
High Light 2SC5171TOSHIBA original chipAudio Power Amplifier IC

2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications

 

 

FEATURES 


• High transition frequency: fT = 200 MHz (typ.)

• Complementary to 2SA1930

 

 

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 180 V, IE = 0

5.0

μA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

5.0

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

180

V

DC current gain

hFE (1)

VCE = 5 V, IC = 0.1 A

100

320

 

hFE (2)

VCE = 5 V, IC = 1 A

50

Collector-emitter saturation voltage

VCE (sat)

IC = 1 A, IB = 0.1 A

0.16

1.0

V

Base-emitter voltage

VBE

VCE = 5 V, IC = 1 A

0.68

1.5

V

Transition frequency

fT

VCE = 5 V, IC = 0.3 A

200

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

16

pF

 

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

180

V

Collector-emitter voltage

VCEO

180

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

2

A

Base current

IB

1

A

Collector power dissipation

Ta = 25°C

PC

2.0

W

Tc = 25°C

20

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

55 to 150

°C

 

Applications


• Power Amplifier Applications

• Driver Stage Amplifier Applications

2SC5171 .pdf

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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