Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 10000pcs |
Delivery Time | 1 day |
Packaging Details | Please contact me for details |
Description | N-Channel 600 V 9.7A (Ta) 80W (Tc) Surface Mount DPAK |
Drain-source voltage | 600 V |
Gate-source voltage | ±30 V |
Drain current (DC) | 9.7 A |
Drain current (pulsed) | 38.8 A |
Power dissipation | 80 W |
Single-pulse avalanche energy | 121 mJ |
Brand Name | |
Model Number | TK10P60W |
Certification | new & original |
Place of Origin | original factory |
View Detail Information
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Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 10000pcs |
Delivery Time | 1 day | Packaging Details | Please contact me for details |
Description | N-Channel 600 V 9.7A (Ta) 80W (Tc) Surface Mount DPAK | Drain-source voltage | 600 V |
Gate-source voltage | ±30 V | Drain current (DC) | 9.7 A |
Drain current (pulsed) | 38.8 A | Power dissipation | 80 W |
Single-pulse avalanche energy | 121 mJ | Brand Name | |
Model Number | TK10P60W | Certification | new & original |
Place of Origin | original factory | ||
High Light | multi emitter transistor ,silicon power transistors |
MOSFETs Silicon N-Channel MOS (DTMOS)
TK10P60W
Applications
• Switching Voltage Regulators
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
Packaging and Internal Circuit
Absolute Maximum Ratings (Note) (Ta = 25℃ unless otherwise specified)
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-source voltage | VDSS | 600 | V |
Gate-source voltage | VGSS | ±30 | V |
Drain current (DC) (Note 1) | ID | 9.7 | A |
Drain current (pulsed) (Note 1) | IDP | 38.8 | A |
Power dissipation (Tc = 25℃) | PD | 80 | W |
Single-pulse avalanche energy (Note 2) | EAS | 121 | mJ |
Avalanche current | IAR | 2.5 | A |
Reverse drain current (DC) (Note 1) | IDR | 9.7 | A |
Reverse drain current (pulsed) (Note 1) | IDRP | 38.8 | A |
Channel temperature | Tch | 150 | ℃ |
Storage temperature | Tstg | -55 to 150 | ℃ |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note
1: Ensure that the channel temperature does not exceed 150℃. Note
2: VDD = 90 V, Tch = 25℃ (initial), L = 33.9 mH, RG = 25 Ω, IAR = 2.5 A
Stock Offer (Hot Sell)
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Company Details
Business Type:
Distributor/Wholesaler
Year Established:
2008
Total Annual:
5000000-7000000
Employee Number:
80~100
Ecer Certification:
Active Member
CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...
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