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ChongMing Group (HK) Int'l Co., Ltd

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China FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor
China FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor

  1. China FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor

FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 8300pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description P-Channel 30 V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Drain-Source Voltage –30 V
Gate-Source Voltage ±25 V
Operating Junction Temperature –55 to +175 °C
Storage Temperature –55 to +175 °C
Drain Current (Continuous) –5.3 A
Thermal Resistance, Junction-to-Case 25 °C/W
Brand Name
Model Number FDS9435A
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 8300pcs
Delivery Time 1 day Packaging Details Please contact me for details
Description P-Channel 30 V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC Drain-Source Voltage –30 V
Gate-Source Voltage ±25 V Operating Junction Temperature –55 to +175 °C
Storage Temperature –55 to +175 °C Drain Current (Continuous) –5.3 A
Thermal Resistance, Junction-to-Case 25 °C/W Brand Name
Model Number FDS9435A Certification new & original
Place of Origin original factory
High Light power mosfet icsilicon power transistors

 

FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor

 

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

 

Applications

· Power management

· Load switch

· Battery protection

 

Features

· –5.3 A, –30 V        RDS(ON) = 50 mW @ VGS = –10 V

                               RDS(ON) = 80 mW @ VGS = –4.5 V

· Low gate charge

· Fast switching speed

· High performance trench technology for extremely low RDS(ON)

· High power and current handling capability

 

Absolute Maximum Ratings TA=25℃ unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ±25 V
ID

Drain Current – Continuous (Note 1a)

 – Pulsed

-5.3 A
-50
PD

Power Dissipation for Single Operation  (Note 1a)

                                                               (Note 1b)

                                                               (Note 1c)

2.5 W
1.2
1
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C

 

 

 

 

 

 

 

 

 

Stock Offer (Hot Sell)

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HD64F3687FPV 3168 RENESAS 14+ TQFP-64
HD74LS00P 8647 RENESAS 16+ DIP-14
HD74LS04P 8718 RENESAS 13+ DIP-14
HD74LS125P 8931 RENESAS 15+ DIP

 

 

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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  • Reach Us
  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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