Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 8760pcs |
Delivery Time | 1 day |
Packaging Details | Please contact me for details |
Description | N-Channel 600 V 4A (Tc) 25W (Tc) Through Hole TO-220FP |
Drain-source Voltage | 600 V |
Drain-gate Voltage | 600 V |
Gate- source Voltage | ± 30 V |
Peak Diode Recovery voltage slope | 4.5 V/ns |
Insulation Withstand Voltage | 2500 V |
Operating Junction Temperature | -55 to 150 °C |
Brand Name | |
Model Number | P4NK60ZFP |
Certification | new & original |
Place of Origin | original factory |
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Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 8760pcs |
Delivery Time | 1 day | Packaging Details | Please contact me for details |
Description | N-Channel 600 V 4A (Tc) 25W (Tc) Through Hole TO-220FP | Drain-source Voltage | 600 V |
Drain-gate Voltage | 600 V | Gate- source Voltage | ± 30 V |
Peak Diode Recovery voltage slope | 4.5 V/ns | Insulation Withstand Voltage | 2500 V |
Operating Junction Temperature | -55 to 150 °C | Brand Name | |
Model Number | P4NK60ZFP | Certification | new & original |
Place of Origin | original factory | ||
High Light | power mosfet ic ,multi emitter transistor |
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STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1
STB4NK60Z-STD4NK60Z-STD4NK60Z-1
N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK
Zener-Protected SuperMESH™Power MOSFET
■ TYPICAL RDS(on) = 1.76 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING
ABSOLUTE MAXIMUM RATINGS
Symbol | Parameter | Value | Unit | ||
STP4NK60Z STB4NK60Z STB4NK60Z-1 |
STP4NK60ZFP |
STD4NK60Z STD4NK60Z-1 |
|||
VDS | Drain-source Voltage (VGS = 0) | 600 | V | ||
VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 600 | V | ||
VGS | Gate- source Voltage | ± 30 | V | ||
ID | Drain Current (continuous) at TC = 25°C | 4 | 4 (*) | 4 | A |
ID | Drain Current (continuous) at TC = 100°C | 2.5 | 2.5 (*) | 2.5 | A |
IDM (•) | Drain Current (pulsed) | 16 | 16 (*) | 16 | A |
PTOT | Total Dissipation at TC = 25°C | 70 | 25 | 70 | W |
Derating Factor | 0.56 | 0.2 | 0.56 | W/°C | |
VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5KΩ) | 3000 | V | ||
dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
°C |
(•) Pulse width limited by safe operating area
(1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Company Details
Business Type:
Distributor/Wholesaler
Year Established:
2008
Total Annual:
5000000-7000000
Employee Number:
80~100
Ecer Certification:
Active Member
CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...
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