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ChongMing Group (HK) Int'l Co., Ltd

  • China,Shenzhen
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China IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF
China IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

  1. China IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

  1. MOQ: 5-10pcs
  2. Price: To be negotiated
  3. Get Latest Price
Payment Terms T/T, Western Union,paypal
Supply Ability 10,000PCS
Delivery Time in stock 2-3days
Packaging Details Tube
Description IGBT NPT 600 V 22 A 156 W Through Hole TO-220AB
PN IRGB10B60KDPBF
Brand INFINEON/IR
Original Germany
Type Insulated Gate Bipolar Transistor Ultrafast Soft Recovery Diode
Voltage IGBT 600V 22A 156W
Package TO220AB
Brand Name INFINEON/IR
Model Number IRGB10B60KDPBF
Certification CE/ RoHS
Place of Origin Germany

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union,paypal Supply Ability 10,000PCS
Delivery Time in stock 2-3days Packaging Details Tube
Description IGBT NPT 600 V 22 A 156 W Through Hole TO-220AB PN IRGB10B60KDPBF
Brand INFINEON/IR Original Germany
Type Insulated Gate Bipolar Transistor Ultrafast Soft Recovery Diode Voltage IGBT 600V 22A 156W
Package TO220AB Brand Name INFINEON/IR
Model Number IRGB10B60KDPBF Certification CE/ RoHS
Place of Origin Germany
High Light 156W Insulated Gate Bipolar Transistor22A Insulated Gate Bipolar TransistorIGBT Bipolar Recovery Diode

IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT

600V 22A 156W TO220AB

 

 

Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
 
 
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
 
 
Part Number IRGB10B60KDPBF
Manufacturer Infineon 
Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Infineon 
Packaging Tube
Original  Germany
Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 22A
Current - Collector Pulsed (Icm) 44A
Vce(on) (Max) @ Vge Ic 2.2V @ 15V 10A
Power - Max 156W
Switching Energy 140µJ (on) 250µJ (off)
Input Type Standard
Gate Charge 38nC

 

 
 
 

Company Details

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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