Supply Ability | 500pcs/month |
Delivery Time | 1-4weeks |
Packaging Details | PET film in 100-grade cleaning room |
material | MONOcrystal GaAs |
industry | semicondutor wafer For ld or led |
application | semiconductor substrate, led chip, optical glass window,device substrates |
method | CZ |
size | 2inch~6inch |
Thickness | 0.675mm |
surface | cmp/etched |
doped | Si-doped |
MOQ | 10PCS |
Brand Name | zmsh |
Model Number | 6INCH GaAs wafer |
Certification | ROHS |
Place of Origin | china |
View Detail Information
Explore similar products
GaAs Laser Epitaxial Wafer Gallium Arsenide Wafer VCSEL/PD Expitaxial Wafer For
Double Side Polished Semicondutor Wafer 1sp 2sp 10X10mm GGG Crystal Substrate
0.5mm Thickness Gallium Arsenide Wafer Zinc Oxide Crystal Substrate
Transparent Orange Undopped GaP Wafers P Type N Type 200um 350um 5G Light
Product Specification
Supply Ability | 500pcs/month | Delivery Time | 1-4weeks |
Packaging Details | PET film in 100-grade cleaning room | material | MONOcrystal GaAs |
industry | semicondutor wafer For ld or led | application | semiconductor substrate, led chip, optical glass window,device substrates |
method | CZ | size | 2inch~6inch |
Thickness | 0.675mm | surface | cmp/etched |
doped | Si-doped | MOQ | 10PCS |
Brand Name | zmsh | Model Number | 6INCH GaAs wafer |
Certification | ROHS | Place of Origin | china |
High Light | VGF Method Gallium Arsenide Substrate ,N Type GaAs Substrates ,2 Degree GaAs Epi Wafer |
2inch 3inch 4inch 6inch VGF method N-Type un-doped GaAs substrates 2degree off 675um SSP DSP GaAs wafers
------------------------------------------------------------------------------------------------------------------------------
GaAs wafer (Gallium Arsenide) is an advantageous alternative to silicon that has been evolving in the semiconductor industry. Less power consumption and more efficiency offered by this GaAs wafers are attracting the market players to adopt these wafers, thereby increasing the demand for GaAs wafer. Generally, this wafer is used to manufacture semiconductors, light emitting diodes, thermometers, electronic circuits, and barometers, besides finding application in the manufacturing of low melting alloys. As the semiconductor and electronic circuit industries continue to touch new peaks, the GaAs market is booming. Gallium arsenide of GaAs wafer has the power of generating laser light from electricity. Especially polycrystalline and single crystal are the two major type of GaAs wafers, which are utilized in the production of both the microelectronics and optoelectronics to create LD, LED, and microwave circuits. Therefore, the extensive range of GaAs applications, particularly in optoelectronics and microelectronics industry is creating a demand influx in the GaAs Wafer Market. Previously, the optoelectronic devices were mainly used on a broad range in short-range optical communications and computer peripherals. But now, they are in demand for some emerging applications such as LiDAR, augmented reality, and face recognition. LEC and VGF are two popular methods which are improving the production of GaAs wafer with high uniformity of electrical properties and excellent surface quality. Electron mobility, single junction band-gap, higher efficiency, heat and moisture resistance, and superior flexibility are the five distinct advantages of GaAs, which are improving the acceptance of GaAs wafers in the semiconductor industry.
GaAs (Gallium Arsenide) for LED Applications | ||
Item | Specifications | Remarks |
Conduction Type | SC/n-type | |
Growth Method | VGF | |
Dopant | Silicon | |
Wafer Diamter | 2, 3 & 4 inch | Ingot or as-cut available |
Crystal Orientation | (100)2°/6°/15° off (110) | Other misorientation available |
OF | EJ or US | |
Carrier Concentration | (0.4~2.5)E18/cm3 | |
Resistivity at RT | (1.5~9)E-3 Ohm.cm | |
Mobility | 1500~3000 cm2/V.sec | |
Etch Pit Density | <500/cm2 | |
Laser Marking | upon request | |
Surface Finish | P/E or P/P | |
Thickness | 220~350um | |
Epitaxy Ready | Yes | |
Package | Single wafer container or cassette |
GaAs (Gallium Arsenide) ,Semi-insulating for Microelectronics Applications
| ||
Item | Specifications | Remarks |
Conduction Type | Insulating | |
Growth Method | VGF | |
Dopant | Undoped | |
Wafer Diamter | 2, 3, 4 & 6 inch | Ingot available |
Crystal Orientation | (100)+/- 0.5° | |
OF | EJ, US or notch | |
Carrier Concentration | n/a | |
Resistivity at RT | >1E7 Ohm.cm | |
Mobility | >5000 cm2/V.sec | |
Etch Pit Density | <8000 /cm2 | |
Laser Marking | upon request | |
Surface Finish | P/P | |
Thickness | 350~675um | |
Epitaxy Ready | Yes | |
Package | Single wafer container or cassette |
No. | Item | Standard Specification | |||||
1 | Size | 2" | 3" | 4" | 6" | ||
2 | Diameter | mm | 50.8±0.2 | 76.2±0.2 | 100±0.2 | 150±0.5 | |
3 | Growth Method | VGF | |||||
4 | Doped | Un-doped, or Si-doped, or Zn-doped | |||||
5 | Conductor Type | N/A, or SC/N, or SC/P | |||||
6 | Thickness | μm | (220-350)±20 or (350-675)±25 | ||||
7 | Crystal Orientation | <100>±0.5 or 2 off | |||||
OF/IF Orientation Option | EJ, US or Notch | ||||||
Orientation Flat (OF) | mm | 16±1 | 22±1 | 32±1 | - | ||
Identification Flat (IF) | mm | 8±1 | 11±1 | 18±1 | - | ||
8 | Resistivity | (Not for Mechanical Grade) | Ω.cm | (1-30)´107, or (0.8-9)´10-3, or 1´10-2-10-3 | |||
Mobility | cm2/v.s | ≥ 5,000, or 1,500-3,000 | |||||
Carrier Concentration | cm-3 | (0.3-1.0)x1018, or (0.4-4.0)x1018, or As SEMI | |||||
9 | TTV | μm | ≤10 | ||||
Bow | μm | ≤10 | |||||
Warp | μm | ≤10 | |||||
EPD | cm-2 | ≤ 8,000 or ≤ 5,000 | |||||
Front/Back Surface | P/E, P/P | ||||||
Edge Profile | As SEMI | ||||||
Particle Count | <50 (size>0.3 μm,count/wafer), or AS SEMI | ||||||
10 | Laser Mark | Back side or upon request | |||||
11 | Packaging | Single wafer container or cassette |
ABOUT OUR ZMKJ
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 10pcs-30pcs.
Q: Do you have inspection report for material?
We can supply detail report for our products.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
Get in touch with us
Leave a Message, we will call you back quickly!