SHANGHAI FAMOUS TRADE CO.,LTD
| Supply Ability | 100pcs |
| Delivery Time | 15days within |
| Packaging Details | by customized case |
| industry | semiconductor substrate |
| materials | sic crystal |
| application | 5G, device material, MOCVD,power electronics |
| Type | 4H-N,semi ,No doped |
| color | green,blue, white |
| hardeness | 9.0 up |
| Brand Name | zmsh |
| Model Number | HPSI |
| Place of Origin | china |
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Product Specification
| Supply Ability | 100pcs | Delivery Time | 15days within |
| Packaging Details | by customized case | industry | semiconductor substrate |
| materials | sic crystal | application | 5G, device material, MOCVD,power electronics |
| Type | 4H-N,semi ,No doped | color | green,blue, white |
| hardeness | 9.0 up | Brand Name | zmsh |
| Model Number | HPSI | Place of Origin | china |
| High Light | Silicon Carbide SiC Polished Wafer ，Colorless SiC Polished Wafer ，4H-N SiC Polished Wafer | ||
Hardness9.4 colourless transparent High purity 4H-SEMI Silicon Carbide SiC Polished Wafer for High transmittance optical application
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | no = 2.61 ne = 2.66 | no = 2.60 ne = 2.65 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K | |
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K | a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
Physical & Electronic Properties of SiC Compared to GaAa and Si
Wide Energy Bandgap (eV)
4H-SiC: 3.26 6H-SiC: 3.03 GaAs: 1.43 Si: 1.12
Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects because of the wide energy bandgap. Also, this property allows SiC to emit and detect short wavelength light which makes the fabrication of blue light emitting diodes and nearly solar blind UV photodetectors possible.
High Breakdown Electric Field [V/cm (for 1000 V operation)]
4H-SiC: 2.2 x 106* 6H-SiC: 2.4 x 106* GaAs: 3 x 105 Si: 2.5 x 105
SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabrication of very high-voltage, high-power devices such as diodes, power transitors, power thyristors and surge suppressors, as well as high power microwave devices. Additionally, it allows the devices to be placed very close together, providing high device packing density for integrated circuits.
High Thermal Conductivity (W/cm · K @ RT)
4H-SiC: 3.0-3.8 6H-SiC: 3.0-3.8 GaAs: 0.5 Si: 1.5
SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any metal. This property enables SiC devices to operate at extremely high power levels and still dissipate the large amounts of excess heat generated.
High Saturated Electron Drift Velocity [cm/sec (@ E ≥ 2 x 105 V/cm)]
4H-SiC: 2.0 x 107 6H-SiC: 2.0 x 107 GaAs: 1.0 x 107 Si: 1.0 x 107
SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC.
Applications
*III-V Nitride Deposition *Optoelectronic Devices
*High-Power Devices *High-Temperature Devices
| 2” | 3” | 4” | 6” | |
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Polytype | 4H/6H | 4H | 4H | 4H |
|
Diameter | 50.80mm±0.38mm | 76.2mm±0.38mm | 100.0mm±0.5mm | 150.0mm±0.2mm |
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FAQ:
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS by FOB.
Q: How to pay?
A: T/T, IN advance
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 30g.
(2) For customized commen products, the MOQ is 50g
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 -4 weeks after you order contact.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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