​​HPSI SiC Wafer 2-12 Inch Optical Grade for AI/AR Glasses​​

​​HPSI SiC Wafer 2-12 Inch Optical Grade for AI/AR Glasses​​

HPSI-type SiC wafers (High-Purity Semi-Insulating Silicon Carbide) serve as core optical materials in AI and AR glasses. With their ​​high refractive index (2.6–2.7 @ 400–800 nm)​​ and ​​low optical absorption characteristics​​, they address issues like "rainbow effects" and insufficient light transmittance in traditional glass or resin materials for AR waveguides. For example, Meta’s Orion AR glasses utilize HPSI SiC waveguide lenses, achieving a ​​70°–80° ultra-wide field of view (FOV)​​ with a single-layer lens thickness of only ​​0.55 mm​​ and weight of ​​2.7 g​​, significantly enhancing wear comfort and immersion.

HPSI SiC Wafer Core Features & Advantages

Material Properties, Optical Performance, and Application Value​​

​​1. Refractive Index: 2.6–2.7​​

• This high refractive index allows replacing multi-layer optical structures with a single-layer lens, reducing light loss and enhancing brightness and color accuracy. Consequently, it enables purer visual displays, eliminates rainbow effects, and supports seamless integration with high-resolution Micro LEDs.

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2. Thermal Conductivity: 490 W/m·K​​

• The material rapidly dissipates heat generated by high-power Micro LEDs, preventing lens deformation and extending device lifespan. This ensures stable performance even in high-temperature environments, such as outdoor use.

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3. Mohs Hardness: 9.5​​

• With exceptional scratch resistance, the material withstands daily wear and tear. This reduces maintenance needs and extends the lens’s service life, improving long-term usability.

4. ​​Wide Bandgap Semiconductor​​

• Its compatibility with CMOS processes enables nanoscale lithography and etching for precise optical grating fabrication. This facilitates wafer-scale production of advanced optical components like diffractive waveguides and micro-resonators.

HPSI SiC Wafer Key Applications​

HPSI SiC Wafer Key Parameter

4-Inch and 6-Inch Semi-Insulating SiC Substrate Specification Comparison​​
Parameter	Grade	4-Inch Substrate	6-Inch Substrate
​​Diameter​​	Z Grade / D Grade	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
​​Poly-type​​	Z Grade / D Grade	4H	4H
​​Thickness​​	Z Grade	500 μm ± 15 μm	500 μm ± 15 μm
	D Grade	500 μm ± 25 μm	500 μm ± 25 μm
​​Wafer Orientation​​	Z Grade / D Grade	On axis: <0001> ± 0.5°	On axis: <0001> ± 0.5°
​​Micropipe Density​​	Z Grade	≤ 1 cm²	≤ 1 cm²
	D Grade	≤ 15 cm²	≤ 15 cm²
​​Resistivity​​	Z Grade	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
	D Grade	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm
​​Primary Flat Orientation​​	Z Grade / D Grade	(10-10) ± 5.0°	(10-10) ± 5.0°
​​Primary Flat Length​​	Z Grade / D Grade	32.5 mm ± 2.0 mm	Notch
​​Secondary Flat Length​​	Z Grade / D Grade	18.0 mm ± 2.0 mm	-
​​Edge Exclusion​​	Z Grade / D Grade	3 mm	3 mm
​​LTV / TTV / Bow / Warp​​	Z Grade	≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm	≤ 2.5 μm / ≤ 6 μm / ≤ 25 μm / ≤ 35 μm
	D Grade	≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm	≤ 5 μm / ≤ 15 μm / ≤ 40 μm / ≤ 80 μm
​​Roughness​​	Z Grade	Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm
	D Grade	Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Polish Ra ≤ 1 nm / CMP Ra ≤ 0.5 nm
​​Edge Cracks​​	D Grade	Cumulative area ≤ 0.1%	Cumulative length ≤ 20 mm, single ≤ 2 mm
​​Polytype Areas​​	D Grade	Cumulative area ≤ 0.3%	Cumulative area ≤ 3%
​​Visual Carbon Inclusions​​	Z Grade	Cumulative area ≤ 0.05%	Cumulative area ≤ 0.05%
	D Grade	Cumulative area ≤ 0.3%	Cumulative area ≤ 3%
​​Silicon Surface Scratches​​	D Grade	5 allowed, each ≤1mm	Cumulative length ≤ 1 x diameter
​​Edge Chips​​	Z Grade	None permitted (width and depth ≥0.2mm)	None permitted (width and depth ≥0.2mm)
	D Grade	7 allowed, each ≤1mm	7 allowed, each ≤1mm
​​Threading Screw Dislocation​​	Z Grade	-	≤ 500 cm²
​​Packaging​​	Z Grade / D Grade	Multi-wafer Cassette Or Single Wafer Container	Multi-wafer Cassette Or Single Wafer Container

 

 

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ZMSH Services​

 

 

ZMSH as an integrated manufacturing and trading entity, delivers end-to-end solutions for SiC products:

 

• ​​Vertical Integration​​: In-house crystal growth furnaces produce 4H-N, 4H-HPSI, 6H-P, and 3C-N type wafers (2–12-inch), with customizable parameters (e.g., doping concentration, bending strength).

• ​​Precision Processing​​:

1. ​​Wafer-Level Cutting​​: Laser dicing and chemical mechanical polishing (CMP) achieve surface roughness <0.3 nm.
2. ​​Custom Shapes​​: Produces prisms, square wafers, and waveguide arrays for AR optical module integration.

• ​​Contact Us​​: Samples and technical consultations available. Full-service support from design validation to mass production.

 

 

 

 

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ZMSH's SiC Products

 

 

SiC Wafers 4H-Semi

 

 

1. 4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates AR Glasses Optical Grade

 

 

 

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SiC Wafers 4H-N

 

 

2. 4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized

 

 

 

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Other types of SiC samples

 

 

 

Q1: Why is HPSI SiC Wafer critical for AR glasses?​​

A1: HPSI SiC Wafer’s ​​high refractive index (2.6–2.7)​​ and ​​low optical absorption​​ eliminate rainbow effects in AR displays while enabling ultra-thin waveguides (e.g., Meta Orion’s 0.55mm lenses).

​​Q2: How does HPSI SiC differ from traditional glass in AR optics?​​

A2: HPSI SiC offers ​​2x higher refractive index​​ than glass (~2.0), allowing wider FOV and single-layer waveguides, plus ​​490 W/m·K thermal conductivity​​ to manage heat from Micro LEDs.

​​Q3: Is HPSI SiC compatible with other semiconductor materials?​​

A3: Yes, it integrates with ​​GaN​​ and ​​silicon​​ in hybrid systems, but its ​​thermal stability​​ and ​​dielectric properties​​ make it superior for high-power AR optics.

Tags: #​​HPSI SiC Wafer, #Silicon Carbide Substrate, #Customized, #​​Double-Side Polished, #High-Purity, #Optical Component, #Corrosion-Resistant, #High-Temperature Rated​​, #​​HPSI, #Optical-Grade, #2-12 Inch, #Optical Grade, #AI/AR Glasses​​