Payment Terms | T/T |
Delivery Time | 2-4weeks |
Density | 3.21g/cm ³ |
Hardness | 2500 Vickers hardness |
Grain Size | 2~10μm |
Chemical Purity | 99.99995% |
Heat Capacity | 640J·kg-1 ·K-1 |
Thermal conductivity | 300 (W/mK) |
Brand Name | ZMSH |
Model Number | SiC Finger Fork |
Certification | rohs |
Place of Origin | CHINA |
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Product Specification
Payment Terms | T/T | Delivery Time | 2-4weeks |
Density | 3.21g/cm ³ | Hardness | 2500 Vickers hardness |
Grain Size | 2~10μm | Chemical Purity | 99.99995% |
Heat Capacity | 640J·kg-1 ·K-1 | Thermal conductivity | 300 (W/mK) |
Brand Name | ZMSH | Model Number | SiC Finger Fork |
Certification | rohs | Place of Origin | CHINA |
High Light | Custom Sic Ceramics carrier End Effector ,Sic Ceramics carrier End Effector |
The wafer handling end effector, manufactured with ultra-precision machining technology, achieves micron-level dimensional accuracy (±0.01mm) and exceptional thermal stability (CTE ≤4.5×10⁻⁶/K). Its surface features an advanced CVD-deposited nanocrystalline SiC protective layer (purity >99.995%), delivering superior surface finish (Ra<0.05μm) and wear resistance (wear rate <0.1μm/1000 cycles), while ensuring damage-free wafer transfer at high speeds (1.5m/s) with minimal particle generation (<5 particles/ft³). Our high-purity SiC-coated end effector demonstrates outstanding performance stability across extreme temperatures (-200°C~1200°C), excellent thermal uniformity (±1°C@150mm wafer) for epitaxial growth thickness consistency (±1.5%), and remarkable chemical resistance (pH1-13), maintaining reliable operation through >100,000 cycles.
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1. Nanoscale SiC Protective Layer via CVD Technology
- Deposited using hot-wall CVD reactor (1200°C) with 20-50nm grain size
- Coating density ≥3.18g/cm³, porosity <0.1%
2. Exceptional High-Temperature Stability & Thermal Uniformity
- Maintains thermal conductivity ≥120W/m·K at 1000°C
-Thermal deformation <0.02mm/100mm (ASTM E228 certified)
3. Ultra-Fine SiC Crystalline Coating for Atomic-Level Smoothness
- Diamond slurry polished to Ra<0.3nm (AFM verified)
- Surface friction coefficient μ<0.15 (vs. silicon wafer)
4. Superior Chemical Resistance & Cleaning Durability
- Etching rate <0.01μm/cycle in SC1/SC2 solutions
- Passes 2000-cycle ozone water cleaning test (80°C)
5. Proprietary Structural Design Preventing Cracking/Delamination
- Stress buffer layer design (SiC/Si gradient transition)
- Withstands 1000 thermal shock cycles (-196°C~300°C) (MIL-STD-883 compliant)
1. Semiconductor Front-End Processes:
· Wafer transportation within fabs (AMHS)
· Lithography tool loading/unloading
2. Advanced Packaging:
· Precision alignment for Fan-out and 3D IC stacking
· Ultra-thin wafer handling (<100μm) for GaN/SiC compound semiconductors
3. Vacuum Environments:
· Wafer transfer in PVD/CVD chambers
Category | Specification | Technical Parameters |
Process Compatibility | High-speed transfer | Supports 300mm wafers at ≥1.5m/s, 0.5G acceleration |
Ultra-thin wafer handling | Stress-free gripping of 50μm wafers (optional vacuum chuck) | |
Cleanroom compatibility | SEMI S2/S8 certified, particle-free operation | |
Material Types | CVD-SiC | Ultra-high purity (Ra<0.1μm), ≤5nm node processes |
RBSiC | Cost-effective for packaging/test applications | |
SiC-coated aluminum | Lightweight composite for non-critical processes | |
Core Functions | Traditional end effector replacement | Eliminates thermal deformation/contamination (vs quartz/aluminum) |
Precision alignment | Wafer-to-equipment (robots/process chambers) | |
Breakage reduction | <0.001% breakage rate, improves OEE |
ZMSH is a leading provider of high-performance Silicon Carbide (SiC) wafer handling solutions, specializing in precision-engineered carrier plates and end effectors for semiconductor manufacturing. Our advanced SiC components feature ultra-pure CVD coatings with surface roughness below 0.1μm Ra, ensuring particle-free operation in Class 1 cleanroom environments. The products demonstrate exceptional thermal stability, maintaining dimensional accuracy within ±0.03mm across extreme temperature ranges from -200°C to 1300°C, with thermal expansion coefficients as low as 4.1×10⁻⁶/K.
1. Q: What are end effectors in material handling?
A: End effectors are the specialized devices attached to robotic arms that directly interact with and manipulate materials or products during handling operations.
2. Q:What are end effectors used for?
A: They are used for precise gripping, lifting, transferring, or positioning of items in automated systems, particularly in manufacturing and logistics.
Tag: #SiC Finger Fork, #SiC Coated, #SiC Tray, # High-Purity SiC, #High-purity Silicon Carbide, #Customizable, #End Effector for Wafer Handling
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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