SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | 2-4weeks |
| Polytype | 4H |
| Diameter | 153, 155 |
| Size | 2inch-12inch, Customized |
| Resistivity | 0.01~0.04Ω·cm |
| Surface Orientation Error | 4°toward<11-20>±0.5º |
| Application | MOSFETs, Radio frequency device |
| Brand Name | ZMSH |
| Model Number | SiC seed wafer |
| Certification | rohs |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Delivery Time | 2-4weeks |
| Polytype | 4H | Diameter | 153, 155 |
| Size | 2inch-12inch, Customized | Resistivity | 0.01~0.04Ω·cm |
| Surface Orientation Error | 4°toward<11-20>±0.5º | Application | MOSFETs, Radio frequency device |
| Brand Name | ZMSH | Model Number | SiC seed wafer |
| Certification | rohs | Place of Origin | CHINA |
| High Light | 4H SiC seed wafer ，MOSFETs SiC seed wafer ，12 inch SiC seed wafer | ||
Silicon Carbide (SiC) seed crystal wafers serve as fundamental materials in the semiconductor industry. Manufactured from high-purity silicon carbide (SiC) raw materials through Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD) processes, our company specializes in supplying 2-12 inch SiC seed crystal wafers with various diameter specifications (Dia153, 155, 203, 205, 208) to meet diverse customer requirements.
Equipped with state-of-the-art SiC seed crystal wafer production facilities, ZMSH possess comprehensive capabilities encompassing crystal growth, cutting, grinding, and polishing processes, enabling us to provide high-precision customization services. Moving forward, we will continue to optimize manufacturing processes for large-size (8-12 inch) SiC seed crystal wafers while enhancing crystal quality and yield rates to facilitate their applications in high-end markets including power electronics, RF devices, and new energy vehicles.
• Exceptional Thermal Conductivity (490W/m·K): SiC seed crystal wafers exhibit superior heat dissipation performance, making them ideal for high-power devices.
• Wide Bandgap (3.2eV): SiC seed crystal wafers demonstrate high voltage and temperature resistance, with operational capabilities exceeding 600°C.
• Excellent Chemical Stability: SiC seed crystal wafers offer remarkable corrosion resistance for harsh environment applications.
• Low Defect Density (EPD < 10³/cm²): The high crystal quality ensures stable device performance.
• Outstanding Mechanical Strength: With hardness approaching diamond, the wafers provide excellent wear and impact resistance.
| Silicon carbide seed wafer | |
| Polytype | 4H |
| Surface orientation error | 4°toward<11-20>±0.5º |
| Resistivity | customization |
| Diameter | 205±0.5mm |
| Thickness | 600±50μm |
| Roughness | CMP,Ra≤0.2nm |
| Micropipe Density | ≤1 ea/cm2 |
| Scratches | ≤5,Total Length≤2*Diameter |
| Edge chips/indents | None |
| Front laser marking | None |
| Scratches | ≤2,Total Length≤Diameter |
| Edge chips/indents | None |
| Polytype areas | None |
| Back laser marking | 1mm (from top edge) |
| Edge | Chamfer |
| Packaging | Multi-wafer cassette |
• Power Semiconductors: SiC seed crystal wafers are used in manufacturing high-efficiency power devices such as MOSFETs and SBDs.
• RF Devices: SiC seed crystal wafers are suitable for high-frequency applications including 5G base stations and radar systems.
• New Energy Vehicles: SiC seed crystal wafers applied in critical components like electric drive systems and onboard chargers.
• Photovoltaic Inverters: SiC seed crystal wafers enhance energy conversion efficiency while reducing power losses.
• Aerospace: SiC seed crystal wafers are capable of withstanding extreme temperatures and radiation for electronic equipment in harsh environments.
ZMSH leverages proprietary manufacturing technologies to deliver comprehensive end-to-end services from crystal growth to precision processing, including customized wafer sizing (2-12 inch), diameter specifications (Dia153/155/203/205/208), and tailored surface finishes. Our SiC seed crystal wafers meet international advanced standards in crystal purity, defect control, and dimensional accuracy, fulfilling the demands of high-end applications in power electronics, RF communications, and new energy sectors. With robust production capacity and flexible supply chain solutions, we ensure reliable volume supply while maintaining stringent quality control throughout the entire manufacturing and delivery process. Our technical team provides full-process support from product selection to after-sales service, helping customers optimize their semiconductor solutions.
SiC substrates 4H-N/SEMI type:
1. Q: What are silicon carbide seed crystal wafers used for?
A: Silicon carbide seed crystal wafers are primarily used for growing high-quality SiC crystals to manufacture power semiconductors, RF devices, and high-temperature electronics.
2. Q: Why choose silicon carbide over silicon wafers?
A: Silicon carbide wafers offer superior thermal conductivity, higher breakdown voltage, and better high-temperature performance compared to traditional silicon wafers.
Tag: #SiC seed wafer, #Shape and size customized, #4H N type, #Dia 153,155, # 2inch-12inch, #manufacturing MOSFETs
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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