Payment Terms | T/T |
Delivery Time | 2-4weeks |
Materials: | Lithium Niobate Single Crystal |
Size: | 4 Inch 6 Inch 8 Inch |
Thickness: | 300-1000nm |
Orientation: | X-axis cut, Y-axis cut, Z-axis cut |
Density: | D=4.64(g/cm3) |
Application | High-speed optical communication, quantum optics |
Brand Name | ZMSH |
Model Number | LNOI Wafers |
Certification | rohs |
Place of Origin | CHINA |
View Detail Information
Explore similar products
Piezoelectric Crystal LiTaO3 LiNbO3 Wafers , Black LT And LN Wafer For Saw
Three Color Lithium Tantalate Wafers , Litao3 Wafer For Saw And Optical
3inch 4inch 6Inch 900 Nm LT LN thin film Y-42° commen
Semiconductor LN Crystals by CZ Czochralski method For Optical application
Product Specification
Payment Terms | T/T | Delivery Time | 2-4weeks |
Materials: | Lithium Niobate Single Crystal | Size: | 4 Inch 6 Inch 8 Inch |
Thickness: | 300-1000nm | Orientation: | X-axis cut, Y-axis cut, Z-axis cut |
Density: | D=4.64(g/cm3) | Application | High-speed optical communication, quantum optics |
Brand Name | ZMSH | Model Number | LNOI Wafers |
Certification | rohs | Place of Origin | CHINA |
High Light | Lithium Niobate Thin Film Wafers ,4'' Lithium Niobate Thin Film Wafers ,8'' Lithium Niobate Thin Film Wafers |
LNOI (Lithium Niobate on Insulator) wafers are advanced photonic platforms based on ultra-thin lithium niobate (LiNbO₃) films (300–900 nm) bonded to insulating substrates (e.g., silicon, sapphire, or glass) via ion implantation and direct bonding techniques.
Key advantages include:
· Flexible sizes: Customizable 4–8-inch wafers with tunable film thickness (standard 600 nm, scalable to micro-scale).
· Heterogeneous integration: Compatible with silicon, nitride, and glass for monolithic integration of electro-optic modulators, quantum light sources, etc.
· ZMSH services: Wafer design, bonding process optimization, wafer-level fabrication (photolithography, etching, metallization), and turnkey solutions for prototyping to mass production.
S.N | Parameters | Specifications |
1 | LNOI wafer general specifications | |
1.1 | Structure | LiNbO₃ / oxide / Si |
1.2 | Diameter | Φ100 ± 0.2 mm |
1.3 | Thickness | 525 ± 25 μm |
1.4 | Primary Flat Length | 32.5 ± 2 mm |
1.5 | Wafer Beveling | R Type |
1.6 | LTV | <1.5 μm (5×5 mm²)/95% |
1.7 | Bow | +/-50 μm |
1.8 | Warp | <50 μm |
1.9 | Edge Trimming | 2 ± 0.5 mm |
2 | Lithium Niobate layer specification | |
2.1 | Average Thickness | 400 nm ± 10 nm |
2.2 | Orientation | X axis ±0.5° |
2.3 | Primary Flat Orientation | Z axis ±1° |
2.4 | Front Surface Roughness(Ra) | <1 nm |
2.5 | Bond Defects | >1 mm None;≤1 mm within 80 total |
2.6 | Front Surface Scratch | >1 cm None;≤1 cm within ≤3 total |
3 | Oxide (SiO2)layer specification | |
3.1 | Thickness | 4700 ± 150 nm |
3.2 | Uniformity | ±5% |
4 | Si layer specification | |
4.1 | Material | Si |
4.2 | Orientation | <100> ±1° |
4.3 | Primary Flat Orientation | <110> ±1° |
4.4 | Resistivity | >10 kΩ·cm |
4.5 | Backside | Etched |
Notes:Valid/Latest authorization from OEM is required |
1. Material Properties:
· High electro-optic coefficient (r₃₃ ≈ 30 pm/V) and wide transparency window (0.35–5 μm), enabling UV-to-MIR applications.
· Ultra-low waveguide loss (<0.3 dB/cm) and high nonlinearity for high-speed modulation and quantum frequency conversion.
2. Process Advantages:
· Sub-300 nm films reduce modal volume, supporting >60 GHz bandwidth modulators.
· Thermal expansion mismatch mitigation through bonding interface engineering (e.g., amorphous silicon layers).
3. Performance Comparison:
· vs. Silicon Photonics/InP: Lower power consumption (<3 V half-wave voltage), higher extinction ratio (>20 dB), and 50% smaller footprint.
1. High-Speed Optical Communications:
- Electro-optic modulators: Enable 800 Gbps/1.6 Tbps modules with >40 GHz bandwidth, 3× efficiency over silicon.
- Coherent modules: Heterogeneously integrated with silicon photonics for low-loss, high-reliability long-haul transmission.
2. Quantum Information Systems:
- Quantum light sources: Integrated entangled photon pair generators for on-chip quantum state manipulation.
- Quantum computing chips: Leverage LiNbO₃’s nonlinearity for qubit fabrication and fault-tolerant architectures.
3. Sensing & Imaging:
- Terahertz detectors: Non-cryogenic imaging with mm-resolution via EO modulation.
- Fiber optic gyroscopes: High-precision inertial navigation for aerospace.
4. Optical Computing & AI Acceleration:
- Photonic ICs: Ultra-low-latency logic gates and switches for parallel AI processing.
1. Core Services:
Wafer Customization: 4–8-inch LNOI wafers with X-cut/Z-cut orientations, MgO doping, and buried oxide layer thickness (50 nm–20 μm).
Heterogeneous Integration: Bonding with silicon, sapphire, or nitride for hybrid EO-optical chips (e.g., laser-modulator monoliths).
Fabrication Services: 150 nm UV lithography, dry etching, Au/Cr metallization, and wafer-level packaging/testing.
End-to-End Support: Design simulation (PIC Studio tools), yield optimization, and full-scale production.
2. Technological Trends:
Larger Wafers: Transition to 8-inch LNOI for cost reduction and capacity scaling.
Ultra-Thin Films: Develop <200 nm films to overcome short-wavelength absorption limits (visible-light applications).
Hybrid Integration: Bond with III-V materials (InP) for laser-modulator integration.
Smart Manufacturing: AI-driven etching parameter optimization to reduce defects (<1 defect/cm²).
1. Q: Is lithium tantalate the same as lithium niobate?
A: No. Lithium tantalate (LiTaO₃) and lithium niobate (LiNbO₃) are distinct materials with different chemical compositions (Ta vs. Nb) but share a similar crystal structure (R3c space group) and ferroelectric properties.
2. Q: Is lithium niobate a perovskite?
A: No. Lithium niobate crystallizes in a non-perovskite structure (R3c space group), differing from the canonical ABX₃ perovskite structure. However, it exhibits perovskite-like ferroelectric behavior due to its ABO₃-like oxygen octahedral framework.
Tag: #3inch/4inch/6inch/8inch, #Customized, #Lithium Niobate Thin Film, #LNOI Wafers, #Unpolished, #Optical Loss <0.05 dB/cm, # X-cut Y-cut Z-cut Orientations
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
Get in touch with us
Leave a Message, we will call you back quickly!