Payment Terms | T/T |
Supply Ability | 1000pcs per month |
Delivery Time | 5-8weeks |
Packaging Details | Package in 100-grade cleaning room |
Crystal Structure | 4H-SiC single crystal |
Size | 2inch 3inch 4inch 6inch |
Diameter/Thickness | Customized |
Resistivity | 0.01–100 Ω·cm |
Surface Roughness | <0.2 nm (Ra) |
TTV | <5 µm |
Brand Name | ZMSH |
Model Number | SiC Epitaxial Wafer |
Certification | rohs |
Place of Origin | CHINA |
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Product Specification
Payment Terms | T/T | Supply Ability | 1000pcs per month |
Delivery Time | 5-8weeks | Packaging Details | Package in 100-grade cleaning room |
Crystal Structure | 4H-SiC single crystal | Size | 2inch 3inch 4inch 6inch |
Diameter/Thickness | Customized | Resistivity | 0.01–100 Ω·cm |
Surface Roughness | <0.2 nm (Ra) | TTV | <5 µm |
Brand Name | ZMSH | Model Number | SiC Epitaxial Wafer |
Certification | rohs | Place of Origin | CHINA |
High Light | 6inch SiC Epitaxial Wafer ,4inch SiC Epitaxial Wafer ,SiC Epitaxial Wafer Production Grade |
2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade
Company Profile:
As a leading SiC (Silicon Carbide) epitaxial wafer supplier, ZMSH specialize in the production, processing, and global distribution of high-quality 4H-N-type conductive and MOS-grade epitaxial wafers in 2-inch (50.8mm), 3-inch (76.2mm), 4-inch (100mm), and 6-inch (150mm) diameters, with capabilities extending up to 12-inch (300mm) for future industry demands.
Our product portfolio includes:
· 4H-N-type & 6H-N-type conductive SiC substrates (for power devices)
· High-Purity Semi-Insulating (HPSI) & SEMI-standard wafers (for RF applications)
· 4H/6H-P-type & 3C-N-type SiC wafers (for specialized semiconductor needs)
· Custom doping, thickness, and surface finishes (CMP, epi-ready, etc.)
With advanced CVD epitaxial growth technology, strict quality control (ISO 9001), and full in-house processing capabilities, we serve automotive, power electronics, 5G, and aerospace industries worldwide.
Parameter | Specifications |
Crystal Structure | 4H-SiC (N-type) |
Diameter | 2" / 3" / 4" / 6" |
Epi Thickness | 5-50 µm (custom) |
Doping Concentration | 1e15~1e19 cm⁻³ |
Resistivity | 0.01–100 Ω·cm |
Surface Roughness | <0.2 nm (Ra) |
Dislocation Density | <1×10³ cm⁻² |
TTV (Total Thickness Variation) | <5 µm |
Warpage | <30 µm |
(All specs customizable – contact us for project-specific requirements.)
1. Superior Electrical Performance
2. Excellent Thermal Properties
3. High-Quality Epitaxial Layer
4. Multiple Wafer Grades Available
1. Electric Vehicles (EVs) & Fast Charging
2. Renewable Energy & Industrial Power
3. 5G & RF Communications
4. Aerospace & Defense
5. Consumer & Industrial Electronics
1. Full-Cycle Manufacturing & Customization
· SiC substrate production (2" to 12")
· Epitaxial growth (CVD) with controlled doping (N/P-type)
· Wafer processing (lapping, polishing, laser marking, dicing)
2. Testing & Certification
· XRD (crystallinity), AFM (surface roughness), Hall effect (carrier mobility)
· Defect inspection (etch pit density, micropipes <1/cm²)
3. Global Supply Chain Support
· Fast prototyping & bulk order fulfillment
· Technical consulting for SiC device design
Why Choose Us?
✔ Vertical integration (substrate → epitaxy → finished wafer)
✔ High yield & competitive pricing
✔ R&D support for next-gen SiC devices
✔ Fast lead times & global logistics
(For datasheets, samples, or quotes – reach out today!)
1. Q: What are the key differences between 2-inch, 4-inch and 6-inch SiC epitaxial wafers?
A: The main differences are in production scalability (6" enables higher volume) and cost-per-chip (larger wafers reduce device costs by ~30%).
2. Q: Why choose 4H-SiC over silicon for power devices?
A: 4H-SiC offers 10x higher breakdown voltage and 3x better thermal conductivity than silicon, enabling smaller, more efficient power systems.
Tags: #2inch 3inch 4inch 6inch, #SiC Epitaxial Wafers, #Silicon Carbide#4H-N, #Conductive, #Production Grade, #MOS Grade
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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