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SHANGHAI FAMOUS TRADE CO.,LTD

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China 2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade
China 2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade

  1. China 2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade
  2. China 2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade
  3. China 2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade

2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade

  1. MOQ: 25
  2. Price: By case
  3. Get Latest Price
Payment Terms T/T
Supply Ability 1000pcs per month
Delivery Time 5-8weeks
Packaging Details Package in 100-grade cleaning room
Crystal Structure 4H-SiC single crystal
Size 2inch 3inch 4inch 6inch
Diameter/Thickness Customized
Resistivity 0.01–100 Ω·cm
Surface Roughness <0.2 nm (Ra)
TTV <5 µm
Brand Name ZMSH
Model Number SiC Epitaxial Wafer
Certification rohs
Place of Origin CHINA

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability 1000pcs per month
Delivery Time 5-8weeks Packaging Details Package in 100-grade cleaning room
Crystal Structure 4H-SiC single crystal Size 2inch 3inch 4inch 6inch
Diameter/Thickness Customized Resistivity 0.01–100 Ω·cm
Surface Roughness <0.2 nm (Ra) TTV <5 µm
Brand Name ZMSH Model Number SiC Epitaxial Wafer
Certification rohs Place of Origin CHINA
High Light 6inch SiC Epitaxial Wafer4inch SiC Epitaxial WaferSiC Epitaxial Wafer Production Grade

 

2inch 3inch 4inch & 6inch SiC epitaxial wafers - overview

 
 

 

2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade

 
 
 

Company Profile:

 

As a leading SiC (Silicon Carbide) epitaxial wafer supplier, ZMSH specialize in the production, processing, and global distribution of high-quality 4H-N-type conductive and MOS-grade epitaxial wafers in 2-inch (50.8mm), 3-inch (76.2mm), 4-inch (100mm), and 6-inch (150mm) diameters, with capabilities extending up to 12-inch (300mm) for future industry demands.

 

 

 

Our product portfolio includes:

 

· 4H-N-type & 6H-N-type conductive SiC substrates (for power devices)

· High-Purity Semi-Insulating (HPSI) & SEMI-standard wafers (for RF applications)

· 4H/6H-P-type & 3C-N-type SiC wafers (for specialized semiconductor needs)

· Custom doping, thickness, and surface finishes (CMP, epi-ready, etc.)

 

With advanced CVD epitaxial growth technology, strict quality control (ISO 9001), and full in-house processing capabilities, we serve automotive, power electronics, 5G, and aerospace industries worldwide.

 

 


 

Key parameters (2inch, 3inch, 4inch, 6inch 4H-N-Type Epi Wafers)

 
 
Parameter Specifications
Crystal Structure 4H-SiC (N-type)
Diameter 2" / 3" / 4" / 6"
Epi Thickness 5-50 µm (custom)
Doping Concentration 1e15~1e19 cm⁻³
Resistivity 0.01–100 Ω·cm
Surface Roughness <0.2 nm (Ra)
Dislocation Density <1×10³ cm⁻²
TTV (Total Thickness Variation) <5 µm
Warpage <30 µm

 

 

(All specs customizable – contact us for project-specific requirements.)

 

 


 

Key features of 4H-N SiC epitaxial wafers


 

1. Superior Electrical Performance

  • SiC epitaxial wafers wide bandgap (3.2 eV) & high breakdown voltage (>2 MV/cm) for high-power devices
  • SiC epitaxial wafers low on-resistance (R<sub>on</sub>) for efficient power conversion

 

2. Excellent Thermal Properties

  • SiC epitaxial wafers high thermal conductivity (4.9 W/cm·K) for better heat dissipation
  • SiC epitaxial wafers stable up to 600°C+, ideal for harsh environments

 

3. High-Quality Epitaxial Layer

  • SiC epitaxial wafers low defect density (<1×10³ cm⁻²) for reliable device performance
  • Uniform thickness (±2%) and doping control (±5%) for consistency

 

4. Multiple Wafer Grades Available

  • Conductive Grade (for diodes, MOSFETs)
  • MOSFET Grade (ultra-low defects for high-performance transistors)

 

 


Primary applications of 4H-N SiC epitaxial wafers

 

 

1. Electric Vehicles (EVs) & Fast Charging

  • SiC MOSFETs & Schottky diodes for inverters and OBCs (higher efficiency than Si)

 

 

2. Renewable Energy & Industrial Power

  • Solar inverters, wind turbines, and smart grids (lower energy loss)

 

 

3. 5G & RF Communications

  • GaN-on-SiC RF devices for 5G base stations (high-frequency operation)

 

 

4. Aerospace & Defense

  • SiC epitaxial wafers can be used for Radar, satellite comms, and high-voltage systems (extreme environment stability)

 

 

5. Consumer & Industrial Electronics

  • SiC epitaxial wafers can be used for high-efficiency PSUs, motor drives, and UPS systems

 

 


 

ZMSH's Services of 4H-N SiC epitaxial wafers

 

 

1. Full-Cycle Manufacturing & Customization

· SiC substrate production (2" to 12")

· Epitaxial growth (CVD) with controlled doping (N/P-type)

· Wafer processing (lapping, polishing, laser marking, dicing)

 

 

2. Testing & Certification

· XRD (crystallinity), AFM (surface roughness), Hall effect (carrier mobility)

· Defect inspection (etch pit density, micropipes <1/cm²)

 

 

3. Global Supply Chain Support

· Fast prototyping & bulk order fulfillment

· Technical consulting for SiC device design

 

 

 

Why Choose Us?

✔ Vertical integration (substrate → epitaxy → finished wafer)

✔ High yield & competitive pricing

✔ R&D support for next-gen SiC devices

✔ Fast lead times & global logistics

(For datasheets, samples, or quotes – reach out today!)

 

 


 

FAQ of 4H-N SiC epitaxial wafers

 

 

1. Q: What are the key differences between 2-inch, 4-inch and 6-inch SiC epitaxial wafers?

A: The main differences are in production scalability (6" enables higher volume) and cost-per-chip (larger wafers reduce device costs by ~30%).

 

 

2. Q: Why choose 4H-SiC over silicon for power devices?

A: 4H-SiC offers 10x higher breakdown voltage and 3x better thermal conductivity than silicon, enabling smaller, more efficient power systems.

 

 

 

Tags: #2inch 3inch 4inch 6inch, #SiC Epitaxial Wafers, #Silicon Carbide#4H-N, #Conductive, #Production Grade, #MOS Grade

 

 

Company Details

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  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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