2inch Diameter 50.8 Mm 4H-N Type SiC Epitaxial Wafer For High-Temperature

2inch Diameter 50.8 mm 4H-N Type SiC Epitaxial Wafer for High-Temperature Sensors

ZMSH is a globally leading provider of silicon carbide semiconductor material solutions, with over 10 years of R&D and production experience in SiC substrates and epitaxial wafers. We have established a fully integrated vertical supply chain, from crystal growth to wafer processing and epitaxial deposition, achieving complete process autonomy. Our product portfolio covers full-size specifications from 2-inch to 12-inch, including various polytypes such as 4H/6H-N type, 4H/6H-P type, and 3C-N type SiC, as well as HPSI (High Purity Semi-Insulating) and SEMI-standard wafers for diverse application scenarios. Leveraging advanced crystal growth technologies and stringent quality control systems, we deliver high-quality SiC material solutions to over 200 global clients, with products widely applied in strategic emerging industries including new energy, 5G communications, and rail transportation.

Key parameters of 2inch SiC epitaxial wafer 4H

(Note: All parameters can be customized according to customer requirements, with complete test reports and quality certificates provided.)

Key features of 2inch SiC epitaxial wafer 4H

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1. Outstanding Electrical Properties

· 4H-SiC features a wide bandgap of 3.2eV and breakdown field strength exceeding 2MV/cm, ten times that of silicon materials. These characteristics make it particularly suitable for manufacturing high-voltage, high-power electronic devices, significantly reducing conduction losses and improving system efficiency.

· Electron saturation drift velocity reaches 2×10^7 cm/s, giving it distinct advantages in high-frequency applications.

2. Excellent Thermal Management Capabilities

· Thermal conductivity as high as 4.9W/cm·K, three times that of silicon materials, effectively addressing heat dissipation challenges in high-power-density devices.

· Low thermal expansion coefficient of 4×10^-6/K maintains excellent dimensional stability in high-temperature operating environments.

3. Superior Material Quality

· Advanced step-controlled epitaxial technology achieves industry-leading epitaxial layer dislocation density below 1×10^3 cm^-2.

· Precision chemical-mechanical polishing ensures surface roughness controlled within 0.2nm (Ra), meeting the most stringent device manufacturing requirements.

4. Exceptional Process Consistency

· Thickness uniformity controlled within ±2% and doping concentration deviation less than 5%, ensuring stable and reliable mass production.

· Advanced online monitoring systems enable real-time process control and precise regulation.

Primary applications of 2inch SiC epitaxial wafer 4H

1. New Energy Vehicle Sector

· As core material for EV inverters, improving system efficiency by over 15% and significantly extending driving range.

· Applied in onboard charging systems to support higher-power fast charging requirements.

2. Industrial Power Electronics

· Used in smart grids, industrial frequency converters, etc., dramatically improving energy conversion efficiency.

· Particularly suitable for demanding environments like rail transportation and marine power systems.

3. 5G Communication Infrastructure

· Ideal substrate material for 5G base station power amplifiers, supporting higher frequency and greater power RF signal processing.

· Demonstrates outstanding performance in satellite communication systems.

4. Aerospace and Defense

· Critical material for radar systems and electronic warfare equipment.

· Meets reliability and stability requirements in extreme environments.

5. Renewable Energy Generation

· Optimal choice for photovoltaic inverters to improve power generation efficiency.

· Key component material for wind power generation systems.

ZMSH's service of SiC epitaxial wafer

As a full-solution provider in the SiC materials field, ZMSH offer one-stop solutions for SiC substrates and epitaxial wafers from 2-inch to 12-inch sizes, covering various polytypes including 4H/6H-N type, 4H/6H-P type, 3C-N type, and HPSI wafers, with customization options for crystal orientation, doping concentration, and epitaxial layer thickness. With our self-sufficient complete industrial chain, we are equipped with internationally leading CVD epitaxial equipment and precision processing lines, providing full-range services from crystal growth, wafer dicing, double-side polishing to laser scribing, complemented by professional testing and certification including XRD, AFM, and Hall measurements. With a monthly production capacity exceeding 5,000 wafers, we can rapidly respond to customer needs from R&D samples to mass production orders. Our dedicated technical support team offers value-added services including product selection guidance, application development, and after-sales support, committed to delivering high-quality, highly consistent silicon carbide material solutions to global customers.