SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Supply Ability | 1000pc/month |
| Delivery Time | in 30days |
| Packaging Details | customzied plastic box |
| Size | 2inch,4inch,6inch,5×5,10×10 |
| Dielectric Constant | 9.7 |
| Surface Hardness | HV0.3>2500 |
| Density | 3.21 G/cm3 |
| Thermal Expansion Coefficient | 4.5 X 10-6/K |
| Breakdown Voltage | 5.5 MV/cm |
| Applications | Communications, Radar systems |
| Brand Name | ZMSH |
| Model Number | 3C-N SiC |
| Certification | rohs |
| Place of Origin | CHINA |
View Detail Information
Explore similar products
4H-N Silicon Carbide SiC Substrate 2inch 3inch 4inch 6inch 8inch 12inch Prime
High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon
Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2
2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector
Product Specification
| Payment Terms | T/T | Supply Ability | 1000pc/month |
| Delivery Time | in 30days | Packaging Details | customzied plastic box |
| Size | 2inch,4inch,6inch,5×5,10×10 | Dielectric Constant | 9.7 |
| Surface Hardness | HV0.3>2500 | Density | 3.21 G/cm3 |
| Thermal Expansion Coefficient | 4.5 X 10-6/K | Breakdown Voltage | 5.5 MV/cm |
| Applications | Communications, Radar systems | Brand Name | ZMSH |
| Model Number | 3C-N SiC | Certification | rohs |
| Place of Origin | CHINA | ||
| High Light | N-type SiC substrate for 5G ，3C-SiC substrate with warranty ，5G communication SiC substrate | ||
3C-SiC Substrate N type Product Grade For 5G Communications
ZMSH specializes in the R&D and production of third-generation semiconductor materials, with over a decade of industry expertise. We provide customized services for semiconductor materials such as sapphire, silicon wafers, and SOI. In the field of silicon carbide (SiC), we cover 4H/6H/3C-type substrates, supporting full-size supply from 2-inch to 12-inch wafers, with flexible customization to meet client requirements, achieving integrated industrial and trade services.
Our SiC substrates are engineered for high-frequency power devices and automotive applications (e.g., EV inverters), offering thermal stability up to 1,600°C and thermal conductivity of 49 W/m·K, outperforming silicon-based alternatives . We adhere to international standards and hold certifications for aerospace-grade materials, ensuring compatibility with extreme environments.
1. Multi-size Coverage:
2. Low Defect Density:
3. Process Compatibility:
1. Electrical Advantages:
2. Thermal Performance:
3. Chemical Stability:
| Grade | Zero MPD Production Grade (Z Grade) | Standard Production Grade (P Grade) | Dummy Grade (D Grade) | ||
| Diameter | 145.5 mm–150.0 mm | ||||
| Thickness | 350 μm ±25 μm | ||||
| Wafer Orientation | Off axis: 2.0°-4.0°toward [1120]± 0.5° for 4H/6H-P, On axis: 〈111〉 ± 0.5° for 3C-N | ||||
| ** Micropipe Density | 0 cm⁻² | ||||
| ** Resistivity | p-type 4H/6H-P | ≤0.1 Ω·cm | ≤0.3 Ω·cm | ||
| n-type 3C-N | ≤0.8 mΩ·cm | ≤1 mΩ·cm | |||
| Primary Flat Orientation | 4H/6H-P | {1010} ±5.0° | |||
| 3C-N | {110} ±5.0° | ||||
| Primary Flat Length | 32.5 mm ±2.0 mm | ||||
| Secondary Flat Length | 18.0 mm ±2.0 mm | ||||
| Secondary Flat Orientation | Silicon face up, 90° CW. from Prime flat ±5.0° | ||||
| Edge Exclusion | 3 mm | 6 mm | |||
| LTV/TIV/Bow/Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| * Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Edge Cracks By High Intensity Light | None | Cumulative length≤10 mm, single length≤2 mm | |||
| * Hex Plates By High Intensity Light | Cumulative area≤0.05% | Cumulative area≤0.1% | |||
| * Polytype Areas By High Intensity Light | None | Cumulative area≤3% | |||
| Visual Carbon Inclusions | None | Cumulative area≤0.05% | |||
| # Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter | |||
| Edge Chips High By Intensity Light | None permitted≥0.2mm width and depth | 5 allowed, ≤1 mm each | |||
| Silicon Surface Contamination By High Intensity | None | ||||
| Packaging | Multi-wafer Cassette or Single Wafer Container | ||||
Notes:
* Defects limits apply to entire wafer surface except for the edge exclusion area.
* The scratches should be checked on Si face only.
1. High-Frequency Power Devices:
2. Electric Vehicles (EVs):
3. Industrial & Energy:
4. Aerospace:
Q1: What is 3C-SiC substrate?
A1: 3C-SiC (cubic silicon carbide) is a semiconductor material with a cubic crystal structure, offering high electron mobility (1,100 cm²/V·s) and thermal conductivity (49 W/m·K), ideal for high-frequency and high-temperature applications.
Q2: What are the main applications of 3C-SiC substrates?
A2: 3C-SiC substrates are used in 5G RF devices, EV inverters, and aerospace electronics due to their low-loss characteristics and radiation resistance.
Tag: #Silicon carbide substrate, #3C-N type SIC, #Semiconductor materials, #3C-SiC Substrate, #Product Grade, #5G Communications
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
Get in touch with us
Leave a Message, we will call you back quickly!