SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Supply Ability | 1000pc/month |
| Delivery Time | in 30days |
| Packaging Details | customzied plastic box |
| Size | 2inch,4inch,6inch,5×5,10×10 |
| Dielectric Constant | 9.7 |
| Surface Hardness | HV0.3>2500 |
| Density | 3.21 G/cm3 |
| Thermal Expansion Coefficient | 4.5 X 10-6/K |
| Breakdown Voltage | 5.5 MV/cm |
| Applications | Communications, Radar systems |
| Brand Name | ZMSH |
| Model Number | 3C-N SiC |
| Certification | rohs |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Supply Ability | 1000pc/month |
| Delivery Time | in 30days | Packaging Details | customzied plastic box |
| Size | 2inch,4inch,6inch,5×5,10×10 | Dielectric Constant | 9.7 |
| Surface Hardness | HV0.3>2500 | Density | 3.21 G/cm3 |
| Thermal Expansion Coefficient | 4.5 X 10-6/K | Breakdown Voltage | 5.5 MV/cm |
| Applications | Communications, Radar systems | Brand Name | ZMSH |
| Model Number | 3C-N SiC | Certification | rohs |
| Place of Origin | CHINA | ||
| High Light | 4H-SiC substrate MOS grade ，5x5 mm SiC substrate ，N-type SiC substrate wafer | ||
2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade
3C-N type silicon carbide (3C-SiC) substrate is a wide-bandgap semiconductor material based on the cubic crystal structure (3C), fabricated via liquid phase epitaxy (LPE) or physical vapor transport (PVT). It supports standard sizes from 2-inch to 8-inch, as well as custom dimensions (e.g., 5×5 mm, 10×10 mm). Its core advantages include high electron mobility (1,100 cm²/V·s), wide bandgap (3.2 eV), and high thermal conductivity (49 W/m·K), making it ideal for high-frequency, high-temperature, and high-power device applications.
1. Electrical Performance
2. Thermal & Chemical Stability
3. Process Compatibility
1. 5G Communications & RF Devices
2. Electric Vehicles (EVs)
3. Industrial & Energy Systems
4. Aerospace & Defense
| Grade | Zero MPD Production Grade (Z Grade) | Standard Production Grade (P Grade) | Dummy Grade (D Grade) | ||
| Diameter | 145.5 mm–150.0 mm | ||||
| Thickness | 350 μm ±25 μm | ||||
| Wafer Orientation | Off axis: 2.0°-4.0°toward [1120]± 0.5° for 4H/6H-P, On axis: 〈111〉 ± 0.5° for 3C-N | ||||
| ** Micropipe Density | 0 cm⁻² | ||||
| ** Resistivity | p-type 4H/6H-P | ≤0.1 Ω·cm | ≤0.3 Ω·cm | ||
| n-type 3C-N | ≤0.8 mΩ·cm | ≤1 mΩ·cm | |||
| Primary Flat Orientation | 4H/6H-P | {1010} ±5.0° | |||
| 3C-N | {110} ±5.0° | ||||
| Primary Flat Length | 32.5 mm ±2.0 mm | ||||
| Secondary Flat Length | 18.0 mm ±2.0 mm | ||||
| Secondary Flat Orientation | Silicon face up, 90° CW. from Prime flat ±5.0° | ||||
| Edge Exclusion | 3 mm | 6 mm | |||
| LTV/TIV/Bow/Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| * Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Edge Cracks By High Intensity Light | None | Cumulative length≤10 mm, single length≤2 mm | |||
| * Hex Plates By High Intensity Light | Cumulative area≤0.05% | Cumulative area≤0.1% | |||
| * Polytype Areas By High Intensity Light | None | Cumulative area≤3% | |||
| Visual Carbon Inclusions | None | Cumulative area≤0.05% | |||
| # Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter | |||
| Edge Chips High By Intensity Light | None permitted≥0.2mm width and depth | 5 allowed, ≤1 mm each | |||
| Silicon Surface Contamination By High Intensity | None | ||||
| Packaging | Multi-wafer Cassette or Single Wafer Container | ||||
Notes:
* Defects limits apply to entire wafer surface except for the edge exclusion area.
* The scratches should be checked on Si face only.
Q1: What are the key applications of 2-inch, 4-inch, 6-inch, 8-inch, 5×5mm, and 10×10mm 3C-N-type SiC substrates?
A: They are widely used in 5G RF modules, EV power systems, and high-temperature industrial devices due to their high electron mobility and thermal stability.
Q2: How do 3C-N-type SiC substrates compare to traditional 4H-SiC in performance?
A: 3C-N-type SiC offers lower resistance and better high-frequency performance (up to 2.7×10⁷ cm/s electron velocity), ideal for RF and compact power electronics.
Tag: #Silicon carbide substrate, #3C-N type SIC, #Semiconductor materials, #3C-SiC Substrate, #Product Grade, #5G Communications, #2inch/4inch/6inch/8inch/5×5 mm/10×10 mm, #MOS Grade, #4H-SiC Substrates
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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