SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | 2-4 weeks |
| Material | Indium Arsenide |
| Size | 2inch |
| Thickness | 500um ±25 um |
| Orientation | <100> |
| Desnity | 5.67 g/cm |
| Customized | Supported |
| Brand Name | ZMSH |
| Model Number | InAs wafer |
| Place of Origin | China |
View Detail Information
Explore similar products
Black Indium Phosphide Wafer , Semiconductor Wafer For LD Application
Primary / Dummy Grade Indium Phosphide Wafer Thickness 350um For LD
GaSb
4 Inch Semi-Insulating Indium Phosphide InP Wafer For LD Laser Diode
Product Specification
| Payment Terms | T/T | Delivery Time | 2-4 weeks |
| Material | Indium Arsenide | Size | 2inch |
| Thickness | 500um ±25 um | Orientation | <100> |
| Desnity | 5.67 g/cm | Customized | Supported |
| Brand Name | ZMSH | Model Number | InAs wafer |
| Place of Origin | China | ||
| High Light | Customized Indium Arsenide Wafer ，2 Inch Indium Arsenide Wafer ，500um Indium Arsenide Wafer | ||
2inch Indium Arsenide Wafer InAs Epitaxial Wafer for LD Laser Diode, semiconductor epitaxial wafer, 3inch InAs-Zn wafer, InAs single crystal wafer 2inch 3inch 4inch InAs-Zn substrates for LD application, semiconductor wafer, Indium Arsenide Laser Epitaxial Wafer
Features of InAs-Zn Wafer
- use InAs wafers to manufacture
- support customized ones with design artwork
- direct bandgap, emits light efficiently, used in lasers.
- in the wavelength range of 1.5μm to 5.6μm, quantum well structures
- using techniques such as MOCVD or MBE, etching, metallization, and packaging to achieve the final form of the device
Descriptions of InAs-Zn Wafer
Indium arsenide (InAs) is an important semiconductor material that is widely used in fields such as infrared detectors and lasers due to its narrow band gap (about 0.354 eV).
InAs usually exists in the form of a cubic crystal system, and its high electron mobility makes it perform well in high-speed electronic devices.
High-quality InAs wafers can be grown through techniques such as molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD), which can be used to manufacture efficient infrared detectors, especially in the 3-5 µm and 8-12 µm bands.
In addition, the zinc (Zn) doped InAs structure can adjust its conductivity to form p-type or n-type semiconductors, thereby optimizing its electrical properties.
The development of quantum well and quantum dot structures has further enhanced the application potential of InAs in the optoelectronic field.
Quantum dot technology enables InAs to play an important role in emerging fields such as quantum computing and bioimaging.
With the increasing demand for high-performance infrared devices and quantum technologies, the research and application prospects of InAs and its doped materials are broad.
Details of InAs-Zn Wafer
| parameter | InAs-ZnWafer |
| Material composition | Indium Arsenic (InAs) +Zinc doping |
| Crystal structure | Cubic system (zinc blende structure) |
| Bandwidth | ~0.354 eV |
| Electron mobility | ~30,000 cm²/V·s |
| Hole mobility | ~200 cm²/V·s |
| density | ~5.67 g/cm³ |
| Melting point | ~942 °C |
| Thermal conductivity | ~0.5 W/m·K |
| Optical band gap | ~0.354 eV |
| Doping method | P Type doping (via zinc) |
| Application Areas | Infrared lasers, detectors, quantum dots |
| Size | Dia 2inch |
| Thickness | 500um ±25um |
| Orientation | <100> |
Samples of InAs-Zn Wafer'
*Please feel free to contact us if you have the customized requirements.
About us
Similar product recommendations
1.2" S Doped GaP Semiconductor EPI Wafer N Type P Type 250um 300um Light-Emitting Diodes
2.2" 3" FZ SiO2 Single Crystal IC Chips 100um 200um Dry Wet Oxidation Layer 100nm 300nm
FAQ
1. Q: What about the cost of InAs-Zn wafers compared with other wafers?
A: InAs-Zn wafers are typically more expensive than silicon and GaAs wafers due to material scarcity, complex manufacturing processes, and specialized market demand.
2. Q: What about the future prospects of InAs-Zn wafers?
A: The future prospects of InAs wafers are quite promising.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
Get in touch with us
Leave a Message, we will call you back quickly!