Shaanxi KeGu New Material Technology Co., Ltd
| Payment Terms | L/C,D/A,D/P,T/T,Western Union,MoneyGram |
| Supply Ability | 2,000 pcs/month |
| Packaging Details | Strong wooden box for Global shipping |
| Material | SiC |
| Composition:SiC | ＞85% |
| Color | Black |
| Density | 2.5~2.6g/cm³ |
| Max. Service Temp | 1380℃ |
| Flexural Strength | 70-90 MPa |
| Size | Customized |
| Heat Conduction | 23.26 W/(m·℃) |
| Resistivity | 1000～2000 Ω·mm2/m |
| Tensile Strength | 39.2～49 MPa |
| Max. Service Temp. | 1500℃ |
| Linear Thermal Expansion Coefficient (20-1500℃) | 5×10⁻⁶/℃ |
| Electrical Resistivity | 1000~2000Ω·mm²/m |
| Brand Name | KEGU |
| Place of Origin | China |
| Model Number | Customizable |
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Product Specification
| Payment Terms | L/C,D/A,D/P,T/T,Western Union,MoneyGram | Supply Ability | 2,000 pcs/month |
| Packaging Details | Strong wooden box for Global shipping | Material | SiC |
| Composition:SiC | ＞85% | Color | Black |
| Density | 2.5~2.6g/cm³ | Max. Service Temp | 1380℃ |
| Flexural Strength | 70-90 MPa | Size | Customized |
| Heat Conduction | 23.26 W/(m·℃) | Resistivity | 1000～2000 Ω·mm2/m |
| Tensile Strength | 39.2～49 MPa | Max. Service Temp. | 1500℃ |
| Linear Thermal Expansion Coefficient (20-1500℃) | 5×10⁻⁶/℃ | Electrical Resistivity | 1000~2000Ω·mm²/m |
| Brand Name | KEGU | Place of Origin | China |
| Model Number | Customizable | ||
| High Light | industrial heating elements ，industrial sic heater elements ，ed type heating elements | ||
Type Equal Diameter Silicon Carbide Rods - Low Resistance, Long Lifespan Heating Elements for Industrial Furnaces
The SiC electric heating elements are mainly made of high quality green silion carbide, it's a kind of tubular and non-metallic high temperature Electric Heating Element produced by processing of msaking semifinished product, high-temperature silicification, re-crystallization. ED Series Equal Diameter Silicon Carbide Rods are advanced replacements for traditional thick-end silicon carbide rods. Featuring uniform diameter structure, these rods deliver 30% lower end resistance than traditional models, significantly reducing thermal stress and prolonging service life. Ideal for high-temperature applications up to 1450°C, they excel in energy efficiency with 15-20% power savings.
SiC electric heating element is widely used in high temperature furnaces and other electric heating equipment of magnetic materials, powder metallurgy, ceramics, glass, metallurgy, machinery and other industries.
| Specific Gravity | 2.6-2.8 g/cm3 | Bend Strength | >300 kg |
| Hardne | >9 MOH'S | Tensile Strength | >150 kg/cm3 |
| Porosity Rate | <30% | Thermal Radiance | 0.85 |
| Temperature (℃) | Linear Expansion Cofficient (10-6m/℃) | Thermal Conductivity (kcal/Mgr ℃) | Specific Heat (cal/g ℃) |
| 0 | / | / | 0.148 |
| 300 | 3.8 | / | / |
| 400 | / | / | 0.255 |
| 600 | 4.3 | 14-18 | / |
| 800 | / | / | 0.294 |
| 900 | 4.5 | / | / |
| 1100 | / | 12-16 | / |
| 1200 | 4.8 | / | 0.325 |
| 1300 | / | 10-14 | / |
| 1500 | 5.2 | / | / |
| Atomosphere | Furnace Temp(℃) | Surface Load (W/cm2) | Impact on the Element | Solution |
| Ammonia | 1290 | 3.8 | Acting on SiC to form thus decrease SiO2 protective film | Active at dew point |
| CO2 | 1450 | 3.1 | Erosion of elements | Protecting by quartz tube |
| tube18%CO | 1500 | 4.0 | No action | |
| 20%CO | 1370 | 3.8 | Adsorbing C grains to act on SiO2 protective film | |
| Halogen | 704 | 3.8 | Attacking SiC and decressing SiO2 protective film | Protecting by quartz tube |
| Hydrocarbon | 1310 | 3.1 | Adsorbing C grains causes hot pollution | Filling with enough air |
| Hydrogen | 1290 | 3.1 | Acting on SiC to form thus decrease SiO2 protective film | Active at dew point |
| Menthane | 1370 | 3.1 | Adsorbing C grains causes hot pollution | |
| N | 1370 | 3.1 | Acting with SiC forms SiN insulating layer | |
| Na | 1310 | 3.8 | Erosion of elements | Protecting by quartz tube |
| SO2 | 1310 | 3.8 | Erosion of elements | Protecting by quartz tube |
| Vacuum Atomosphere | 1204 | 3.8 | ||
| Oxygen | 1310 | 3.8 | SiC is oxided | |
| Water (Different Contents) | 1090~1370 | 3.1~3.6 | Acting on SiC forms hydtate of Sillicon |
Company Details
Business Type:
Manufacturer
Year Established:
2017
Total Annual:
800-850
Employee Number:
60~70
Ecer Certification：
Verified Supplier
As a leading advanced materials developer in China, we are established in 2017 with a registered capital of 35.5 million RMB (≈5 million USD) and strategically located in Xixian New District's Qinhan New City, adjacent to major transportation hubs including Xianyang East Expressway. Our team ... As a leading advanced materials developer in China, we are established in 2017 with a registered capital of 35.5 million RMB (≈5 million USD) and strategically located in Xixian New District's Qinhan New City, adjacent to major transportation hubs including Xianyang East Expressway. Our team ...
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