Shaanxi KeGu New Material Technology Co., Ltd
| Payment Terms | L/C,D/A,D/P,T/T,Western Union,MoneyGram |
| Supply Ability | 2,000 pcs/month |
| Packaging Details | Strong wooden box for Global shipping |
| Material | SiC |
| Composition:SiC | ＞85% |
| Color | Black |
| Density | ≥3.65g/cm3 |
| Max. Service Temp | 1380℃ |
| Flexural Strength | 250MPa |
| Hardness | ≥84HRA |
| Water Absorption | ≤0.2% |
| Abrasion | < 0.02% |
| Bending strength | ≥290MPa |
| Brand Name | KEGU |
| Place of Origin | China |
| Model Number | Customizable |
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Product Specification
| Payment Terms | L/C,D/A,D/P,T/T,Western Union,MoneyGram | Supply Ability | 2,000 pcs/month |
| Packaging Details | Strong wooden box for Global shipping | Material | SiC |
| Composition:SiC | ＞85% | Color | Black |
| Density | ≥3.65g/cm3 | Max. Service Temp | 1380℃ |
| Flexural Strength | 250MPa | Hardness | ≥84HRA |
| Water Absorption | ≤0.2% | Abrasion | < 0.02% |
| Bending strength | ≥290MPa | Brand Name | KEGU |
| Place of Origin | China | Model Number | Customizable |
| High Light | 11 Gpa Aluminum Nitride Ceramic ，Electronics Industry Aluminum Nitride Substrates ，11 Gpa Aluminum Nitride Substrates | ||
11 Gpa Aluminum Nitride Ceramics Aluminum Nitride Substrates For Electronics Industry
Substrates based on Alumina (Al2O3), Aluminum nitride (AlN), Silicon nitride (Si3N4) and other ceramic materials, due to their properties, are widely used in the electronics industry.
| Characteristic / Material | Al2O3 96% | Al2O3 99,6% | AlN | Si3N4 |
| Apparent density, g/cm3 | 3,7-3,8 | 3,8-3,9 | 3,3 | 3,5 |
| Vicker’s hardness , GPa | 16 | 21 | 11 | 15 |
| Bending strength , MPa | 500 | 400 | 320 | 750 |
| Elasticity modulus, GPa | 340 | 350 | 320 | 300 |
| Thermal conductivity , W/(m·K) | 24 | 28 | 180 | 55 |
| TCLE, 10-6/ºК | 6,8-8,0 | 6,8-8,5 | 4,7-5,6 | 2,7 |
| Electric strength, KV/mm | 15 | 10 | 16 | 36 |
| Volume resistance, Ohm*m | >1012 | >1012 | >1012 | >1012 |
| Dielectric capacity | 9,8 | 9,9 | 8,9 | 8,5 |
Main applications:
Application features of products from Alumina (Al2O3)
Alumina (Al2O3) has an excellent combination of material characteristics and the lowest cost. High mechanical strength, hardness, wear resistance, fire resistance, thermal conductivity, chemical inertia allow in some cases the replacement of more expensive materials to reduce the cost of production.
The content of Al2O3 varies from 96% to 99.7%, thickness from 0.25 mm. The surface can be grinned or polished, metallization and any geometry is possible.
Application features of products from Aluminum nitride (AlN)
Due to its excellent insulating properties, high thermal conductivity, strength and low coefficient of thermal expansion, aluminum nitride AlN is used in high-power electronic devices, insulated gate bipolar transistors (IGBT), communication systems, LED indicators, passive components, cooling devices, direct connection of components on cooper-loaded solder. The content of AlN varies from 96% to 99.7%, thickness from 0.25 to 11 mm. Processing options for thin-film and thick-film structures: grinding finish and polished surface. Metallization and any geometry is possible.
Application features of products from Silicon nitride (Si3N4)
Silicon nitride (Si3N4) has exceptional mechanical properties at continuous thermal cycling, in deep vacuum, in the regime of increased friction and in other severe operating conditions. Excellent wear resistance and very high bending strength allow to make substrates 0.3 mm thick, which gives low values of thermal resistance (it can be compared with 1.0 mm thick aluminum nitride) while significantly improving the mechanical characteristics that are stable over a wide temperature range and other conditions of an aggressive environment.
Silicon nitride has high radiation resistance, corrosion resistance and considerable electrical strength compared to other ceramic materials.
Company Details
Business Type:
Manufacturer
Year Established:
2017
Total Annual:
800-850
Employee Number:
60~70
Ecer Certification：
Verified Supplier
As a leading advanced materials developer in China, we are established in 2017 with a registered capital of 35.5 million RMB (≈5 million USD) and strategically located in Xixian New District's Qinhan New City, adjacent to major transportation hubs including Xianyang East Expressway. Our team ... As a leading advanced materials developer in China, we are established in 2017 with a registered capital of 35.5 million RMB (≈5 million USD) and strategically located in Xixian New District's Qinhan New City, adjacent to major transportation hubs including Xianyang East Expressway. Our team ...
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