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Sanhuang electronics (Hong Kong) Co., Limited

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China MT29F128G08AMCABH2-10:A IC FLASH 128GBIT PAR 100TBGA Micron Technology Inc.
China MT29F128G08AMCABH2-10:A IC FLASH 128GBIT PAR 100TBGA Micron Technology Inc.

  1. China MT29F128G08AMCABH2-10:A IC FLASH 128GBIT PAR 100TBGA Micron Technology Inc.

MT29F128G08AMCABH2-10:A IC FLASH 128GBIT PAR 100TBGA Micron Technology Inc.

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  2. Price: Based on current price
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Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 128Gbit
Memory Organization 16G x 8
Memory Interface Parallel
Clock Frequency 100 MHz
Write Cycle Time - Word, Page -
Access Time -
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 100-TBGA
Supplier Device Package 100-TBGA (12x18)
Brand Name Micron Technology Inc.
Model Number MT29F128G08AMCABH2-10:A

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  1. Product Details
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Product Specification

Payment Terms T/T Supply Ability In stock
Delivery Time 3-5 work days Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile Memory Format FLASH
Technology FLASH - NAND Memory Size 128Gbit
Memory Organization 16G x 8 Memory Interface Parallel
Clock Frequency 100 MHz Write Cycle Time - Word, Page -
Access Time - Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount
Package / Case 100-TBGA Supplier Device Package 100-TBGA (12x18)
Brand Name Micron Technology Inc. Model Number MT29F128G08AMCABH2-10:A

Product Details

 

General Description

Micron NAND Flash devices include an asynchronous data interface for high-perform ance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands,address, and data. There are five control signals used to implement the asyn chronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

 

 

Features

• Open NAND Flash Interface (ONFI) 2.2-compliant1
• Multiple-level cell (MLC) technology
• Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5

tRC/tWC: 20ns (MIN)
• Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
• RESET (FFh) required as first command after power
on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA

 

Specifications

Attribute Attribute Value
Manufacturer Micron Technology Inc.
Product Category Memory ICs
Series -
Packaging Bulk
Package-Case 100-TBGA
Operating-Temperature 0°C ~ 70°C (TA)
Interface Parallel
Voltage-Supply 2.7 V ~ 3.6 V
Supplier-Device-Package 100-TBGA (12x18)
Memory Capacity 128G (16G x 8)
Memory-Type FLASH - NAND
Speed -
Format-Memory FLASH

Descriptions

FLASH - NAND Memory IC 128Gb (16G x 8) Parallel 100MHz 100-TBGA (12x18)
SLC NAND Flash Parallel/Serial 3.3V 128G-bit 16G x 8 100-Pin TBGA

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2005

  • Total Annual:

    1000000-3000000

  • Employee Number:

    100~150

  • Ecer Certification:

    Verified Supplier

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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Get in touch with us

  • Reach Us
  • Sanhuang electronics (Hong Kong) Co., Limited
  • No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
  • https://www.integratedcircuit-ic.com/

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