Shenzhen Hua Xuan Yang Electronics Co.,Ltd
| Payment Terms | Western Union, L/C, T/T |
| Supply Ability | 10,000PCS/MONTH |
| Delivery Time | 4~5 week |
| Packaging Details | Carton Box |
| RoHs Status: | Lead free / RoHS Compliant |
| Quality: | 100% Original New |
| D/C: | Newest |
| Description | AP2302AGN-HF APEC |
| Type: | IC |
| Brand Name | Hua Xuan Yang |
| Model Number | AP2302AGN-HF |
| Certification | RoHS、SGS |
| Place of Origin | China |
View Detail Information
Explore similar products
HXY4812 High Current Mosfet Switch Dual N Type High Performance
HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A
HXY9926A Logic Mosfet Switch , Mosfet Power Switch ±1.2v VGS Dual N Channel
8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS
Product Specification
| Payment Terms | Western Union, L/C, T/T | Supply Ability | 10,000PCS/MONTH |
| Delivery Time | 4~5 week | Packaging Details | Carton Box |
| RoHs Status: | Lead free / RoHS Compliant | Quality: | 100% Original New |
| D/C: | Newest | Description | AP2302AGN-HF APEC |
| Type: | IC | Brand Name | Hua Xuan Yang |
| Model Number | AP2302AGN-HF | Certification | RoHS、SGS |
| Place of Origin | China | ||
| High Light | 1.38W Power Transistor ICs ，20A Power Transistor ICs ，AP2302AGN-HF APEC Mosfet Transistor | ||
Specialized Hot ICs AP2302AGN-HF APEC AP2302AGN-HF
Description
AP2302A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | +8 | V |
| ID@TA=25℃ | Drain Current3, VGS @ 4.5V | 4.6 | A |
| ID@TA=70℃ | Drain Current3, VGS @ 4.5V | 3.7 | A |
| IDM | Pulsed Drain Current1 | 20 | A |
| PD@TA=25℃ | Total Power Dissipation | 1.38 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
Thermal Data
| Symbol | Parameter | Value | Unit |
| Rthj-a | Maximum Thermal Resistance, Junction-ambient3 | 90 | ℃/W |
AP2302AGN-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | - | - | V |
| RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=4.5V, ID=4A | - | - | 42 | mΩ |
| VGS=2.5V, ID=3A | - | - | 60 | mΩ | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | 0.3 | - | 1.2 | V |
| gfs | Forward Transconductance | VDS=5V, ID=4A | - | 14 | - | S |
| IDSS | Drain-Source Leakage Current | VDS=16V, VGS=0V | - | - | 10 | uA |
| IGSS | Gate-Source Leakage | VGS=+8V, VDS=0V | - | - | +100 | nA |
| Qg | Total Gate Charge2 | ID=4A VDS=10V VGS=4.5V | - | 6.5 | 10.5 | nC |
| Qgs | Gate-Source Charge | - | 1 | - | nC | |
| Qgd | Gate-Drain ("Miller") Charge | - | 2.5 | - | nC | |
| td(on) | Turn-on Delay Time2 | VDS=10V ID=1A RG=3.3Ω VGS=5V | - | 9 | - | ns |
| tr | Rise Time | - | 12 | - | ns | |
| td(off) | Turn-off Delay Time | - | 16 | - | ns | |
| tf | Fall Time | - | 5 | - | ns | |
| Ciss | Input Capacitance | VGS=0V VDS=20V f=1.0MHz | - | 300 | 480 | pF |
| Coss | Output Capacitance | - | 85 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 80 | - | pF | |
| Rg | Gate Resistance | f=1.0MHz | - | 2 | - | Ω |
Source-Drain Diode
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VSD | Forward On Voltage2 | IS=1.2A, VGS=0V | - | - | 1.2 | V |
| trr | Reverse Recovery Time2 | IS=4A, VGS=0V, dI/dt=100A/µs | - | 20 | - | ns |
| Qrr | Reverse Recovery Charge | - | 10 | - | nC |
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad.
Payment:
We accept the payment terms: Telegraphic Transfer(T/T) in advance / PayPal / Western Union / Escrow sevice or Net terms(Long-term cooperation).
We can support many kinds of currency, such as USD; HKD; EUR; CNY and Others, please contact us.
Company Details
Business Type:
Manufacturer
Year Established:
2008
Total Annual:
8000000-10000000
Employee Number:
150~200
Ecer Certification：
Active Member
Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching... Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching...
Get in touch with us
Leave a Message, we will call you back quickly!