Hangzhou Freqcontrol Electronic Technology Ltd.
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer |
| Orientation | C-axis [0001], R-axis [1-102], A-axis [11-20], M-axis [10-10] |
| Transmission Range | 0.17 to 5.5 microns |
| Refractive Index | 1.75449 (o) 1.74663 (e) at 1.06 microns |
| Reflection Loss | at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2% |
| Index of Absorption | 0.3 x 10-3 cm-1 at 2.4 microns |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks | Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer | Orientation | C-axis [0001], R-axis [1-102], A-axis [11-20], M-axis [10-10] |
| Transmission Range | 0.17 to 5.5 microns | Refractive Index | 1.75449 (o) 1.74663 (e) at 1.06 microns |
| Reflection Loss | at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2% | Index of Absorption | 0.3 x 10-3 cm-1 at 2.4 microns |
| Specific Heat Capacity | 419 J/(kg x K) | Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek | Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 | Place of Origin | China |
| High Light | Customized Sapphire Wafer ，Night Infrared Scope al2o3 wafer ，Night Vision Camera Sapphire Wafer | ||
Customized Sapphire Wafer Used As Infrared Windows Night Infrared Scope Night Vision Camera
Sapphire wafers are the epitome of modern semiconductor technology, combining exceptional hardness and chemical stability with superior optical properties. Their unique blend of features makes them ideal for a wide range of electronics applications, from LEDs and solar cells to high-power electronics.
With their exceptional thermal conductivity, sapphire wafers ensure efficient heat dissipation, essential for maintaining performance in high-power devices. Plus, their high transparency in the visible and UV spectrums enables maximum light extraction in optoelectronic devices, leading to superior efficiency and brightness.
The future of electronics is here, and it's made of sapphire. Embrace the power and durability of sapphire wafers and take your electronics to the next level.
| Available orientations: | C-axis [0001], R-axis [1-102], A-axis [11-20], M-axis [10-10], Random |
| Sapphire windows / blanks |
|
| Diameter / Width: | 25.0 - 250.0 mm |
| Tolerance: | Standard ± 2°, Special to ± 0.1° |
| Thickness: | Minimum 0.15, maximum 120.0 mm |
| Surface finish: | As cut, fine ground, lapped, polished s/d 80/50, 60/40, 40/20, 20/10, 10/5, according to the MIL-0-13830A |
| Ends / Edge quality: | Fine ground, 80/50 |
| "As-grown" sapphire tubes: |
|
| Dimensions | Up to 50 mm inner diameter, 0,5 - 4,0 mm wall thickness, 300-600 mm tubes length |
| Orientation | C-axis in the length of the tube |
| Polished sapphire tubes: | Up to 50 mm inside diameter, 0,5 - 3,0 mm wall thickness, 80-350 mm tubes length |
| Ingots: | Diameter/Width 5-220 mm, Thickness/Length 25 – 125 mm |
| Surface quality | As-cut, Ends/Edge Quality Diamond cut |
| OPTICAL PROPERTIES of SAPPHIRE Al2O3 | |
| Transmission Range | 0.17 to 5.5 microns |
| Refractive Index | 1.75449 (o) 1.74663 (e) at 1.06 microns |
| Reflection Loss | at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2% |
| Index of Absorption | 0.3 x 10-3 cm-1 at 2.4 microns |
| dN/dT | 13.7 x 10-6 at 5.4 microns |
| dn/dm = 0 | 1.5 microns |
| PHYSICAL PROPERTIES of SAPPHIRE Al2O3 | |
| Density | 3.97 g/cm3 |
| Melting Point | 2040 degrees C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Young's Modulus (E) | 335 GPa |
| Shear Modulus (G) | 148.1 GPa |
| Bulk Modulus (K) | 240 GPa |
| Elastic Coefficients | C11=496 C12=164 C13=115 |
| Apparent Elastic Limit | 275 MPa (40,000 psi) |
| Poisson Ratio | 0.25 |
Acceptance Check
1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.
2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.
3. Please open the vacuum package in a clean room when the products are to be applied.
4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.
Company Details
Business Type:
Manufacturer,Trading Company
Year Established:
1999
Total Annual:
800M-1500M
Employee Number:
10~99
Ecer Certification：
Verified Supplier
Founded in 1999, Hangzhou Freqcontrol Electronic Technology Ltd. is a China leading manufacturer of piezoelectric crystal wafers, substrates, components and single crystal growth. We, known as the "CQT Group" in global market, headquartered in Hangzhou, China, empowered by its manufacturin... Founded in 1999, Hangzhou Freqcontrol Electronic Technology Ltd. is a China leading manufacturer of piezoelectric crystal wafers, substrates, components and single crystal growth. We, known as the "CQT Group" in global market, headquartered in Hangzhou, China, empowered by its manufacturin...
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