Hangzhou Freqcontrol Electronic Technology Ltd.
| Payment Terms | T/T |
| Supply Ability | 50000 pcs/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette/ Jar package, vaccum sealed |
| Product | LiNbO3 On Insulator |
| Diameter | 4 inch, 6 inch |
| Top Layer | Lithium Niobate |
| Top Thickness | 300~600nm |
| Insolation | SiO2 Thermal Oxide |
| Insolation Thickness | 2000±15nm; 3000±50nm; 4700±100nm |
| the support layer | Si、Fused silica |
| Application | Optical Waveguides and Microwaveguides |
| Brand Name | CQT |
| Model Number | LNOI Wafer |
| Certification | ISO:9001, ISO:14001 |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 50000 pcs/Month |
| Delivery Time | 1-4 weeks | Packaging Details | Cassette/ Jar package, vaccum sealed |
| Product | LiNbO3 On Insulator | Diameter | 4 inch, 6 inch |
| Top Layer | Lithium Niobate | Top Thickness | 300~600nm |
| Insolation | SiO2 Thermal Oxide | Insolation Thickness | 2000±15nm; 3000±50nm; 4700±100nm |
| the support layer | Si、Fused silica | Application | Optical Waveguides and Microwaveguides |
| Brand Name | CQT | Model Number | LNOI Wafer |
| Certification | ISO:9001, ISO:14001 | Place of Origin | China |
| High Light | 6 Inch LNOI Wafers ，High Performance Optical Communication LNOI Wafers ，Compact LNOI Wafers | ||
4-Inch 6-Inch LNOI Wafers The Perfect Choice for Compact and High-Performance Optical Communication
Revolutionize Photonics with Ultra-Low-Loss LNOI Wafers
Next-Gen Lithium Niobate-on-Insulator (LNOI) Platform
Unlock unprecedented performance in integrated photonics with our cutting-edge LNOI wafers, engineered for ultra-low optical loss and sub-nanometer surface roughness . Combining stoichiometric LiNbO₃ thin films with thermally oxidized SiO₂ buried layers, our wafers deliver >30x higher nonlinear efficiency than conventional bulk crystals, while enabling CMOS-compatible fabrication.
Key Advantages
✓ Breakthrough EO Performance: Achieve >100 GHz modulation bandwidth with r₃₃ >30 pm/V, ideal for 800G/1.6T coherent transceivers.
✓ Quantum-Ready Precision: Custom periodic poling (PPLN) with <5 nm domain error for entangled photon generation.
✓ Power-Hardened Design: Withstand >10 MW/cm² optical intensity (Telcordia GR-468 certified).
Applications
▷ 5G/6G ultra-compact EO modulators
▷ Topological photonic circuits & optical computing
▷ Quantum frequency converters (C/L-band to telecom band)
▷ High-sensitivity LiDAR photodetectors
Technical Specifications
• Wafer Size: 100/150 mm diameter (2" to 6" customizable)
• LiNbO₃ Layer: X-cut/Z-cut, thickness 300±5 nm (standard)
• Buried Oxide: 1-3 μm SiO₂, breakdown voltage >200 V/μm
• Substrate: High-resistivity Si (>5 kΩ·cm)
| LNOI Wafer | |||
| Structure | LN / SiO2 / Si | LTV / PLTV | < 1.5 μm ( 5∗ 5 mm2 ) / 95% |
| Diameter | Φ100 ± 0.2 mm | Edge Exclution | 5 mm |
| Thickness | 500 ± 20 μm | Bow | Within 50 μm |
| Primary Flat Length | 47.5 ± 2 mm 57.5 ± 2 mm | Edge Trimming | 2 ± 0.5 mm |
| Wafer Beveling | R Type | Environmental | Rohs 2.0 |
| Top LN Layer | |||
| Average Thickness | 400/600±10 nm | Uniformity | < 40nm @17 Points |
| Refraction index | no > 2.2800, ne < 2.2100 @ 633 nm | Orientation | X axis ± 0.3° |
| Grade | Optical | Surface Ra | < 0.5 nm |
| Defects | >1mm None; ≦1 mm Within 300 total | Delamination | None |
| Scratch | >1cm None; ≦1cm Within 3 | Primary Flat | Perpendicular to +Y Axis ± 1° |
| Isolation SiO2 Layer | |||
| Average Thickness | 2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nm | Uniformity | < ±1% @17 Points |
| Fab. Method | Thermal Oxide | Refraction index | 1.45-1.47 @ 633 nm |
| Substrate | |||
| Material | Si | Orientation | <100> ± 1° |
| Primary Flat Orientation | <110> ± 1° | Resistivity | > 10 kΩ·cm |
| Backside Contamination | No visible stain | Backside | Etch |
Company Details
Business Type:
Manufacturer,Trading Company
Year Established:
1999
Total Annual:
800M-1500M
Employee Number:
10~99
Ecer Certification：
Verified Supplier
Founded in 1999, Hangzhou Freqcontrol Electronic Technology Ltd. is a China leading manufacturer of piezoelectric crystal wafers, substrates, components and single crystal growth. We, known as the "CQT Group" in global market, headquartered in Hangzhou, China, empowered by its manufacturin... Founded in 1999, Hangzhou Freqcontrol Electronic Technology Ltd. is a China leading manufacturer of piezoelectric crystal wafers, substrates, components and single crystal growth. We, known as the "CQT Group" in global market, headquartered in Hangzhou, China, empowered by its manufacturin...
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