Thickness | Min:175 Max:225 |
Dopant | S |
Surface Finish-back | Polished |
Particle Count | N/A |
Edge Rounding | 0.250mmR |
IF Location/Length | EJ[0-1-1]/ 7±1mm |
Conduct Type | S-C-N |
Epi-Ready | Yes |
Brand Name | ZMSH |
Model Number | GaP wafer |
Place of Origin | China |
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Product Specification
Thickness | Min:175 Max:225 | Dopant | S |
Surface Finish-back | Polished | Particle Count | N/A |
Edge Rounding | 0.250mmR | IF Location/Length | EJ[0-1-1]/ 7±1mm |
Conduct Type | S-C-N | Epi-Ready | Yes |
Brand Name | ZMSH | Model Number | GaP wafer |
Place of Origin | China | ||
High Light | GaP Wafer Semiconductor Substrate ,Gallium Phosphide Single Crystal Orientation ,Gallium Phosphide GaP Wafer |
GaP Wafer, Gallium Phosphide single crystal Orientation (111)A 0°±0.2 Solar Cells
Gallium Phosphide GaP, an important semiconductor of unique electrical properties as other III-V compound materials, crystallizes in the thermodynamically stable cubic ZB structure, is an orange-yellow semitransparent crystal material with an indirect band gap of 2.26 eV (300K), which is synthesized from 6N 7N high purity gallium and phosphorus, and grown into single crystal by Liquid Encapsulated Czochralski (LEC) technique. Gallium Phosphide crystal is doped sulfur or tellurium to obtain n-type semiconductor, and zinc doped as p-type conductivity for further fabricating into desired wafer, which has applications in optical system, electronic and other optoelectronics devices. Single Crystal GaP wafer can be prepared Epi-Ready for your LPE, MOCVD and MBE epitaxial application. High quality single crystal Gallium phosphide GaP wafer p-type, n-type or undoped conductivity at Western Minmetals (SC) Corporation can be offered in size of 2″and 3” (50mm, 75mm diameter) , orientation <100>,<111> with surface finish of as-cut, polished or epi-ready process.
Parameter | Value |
---|---|
Growth Method | LEC |
BOW | Max:10 |
Diameter | 50.6±0.3mm |
Particle Count | N/A |
Orientation Angle | N/A |
TTV/TIR | Max:10 |
Dopant | S |
Laser Marking | N/A |
Orientation | (111)A 0°±0.2 |
Mobility | Min:100 |
Semiconductor Material | Semiconductor Substrate |
Surface Oxidation | Ultra-thick Silicon Oxide Wafer |
Brand Name: ZMSH
Model Number: GaP wafer
Place of Origin: China
TTV/TIR: Max:10
BOW: Max:10
OF Location/Length: EJ[0-1-1]/ 16±1mm
Mobility: Min:100
Resistivity: Min:0.01 Max:0.5 Ω.cm
Features:
• Using thin film technology
• Silicon oxide wafer
• Electro-oxidation
• Customized service
We provide a wide range of technical support and services for our Semiconductor Substrate products. Our team of experts are available to provide you with the best solutions for your needs.
Whether you need advice on product selection, installation, testing, or any other technical issue, we are here to help. We offer a variety of services, including:
Our team of experienced engineers and technicians are available to answer any of your questions and provide the best technical advice and support. Contact us today and let us help you find the best solution for your needs.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
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