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China factory - SHANGHAI FAMOUS TRADE CO.,LTD

SHANGHAI FAMOUS TRADE CO.,LTD

  • China,Shanghai ,Shanghai
  • Verified Supplier

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China Dummy Research 2 Inch 6H-Semi Silicon Carbide Wafer
China Dummy Research 2 Inch 6H-Semi Silicon Carbide Wafer

  1. China Dummy Research 2 Inch 6H-Semi Silicon Carbide Wafer
  2. China Dummy Research 2 Inch 6H-Semi Silicon Carbide Wafer
  3. China Dummy Research 2 Inch 6H-Semi Silicon Carbide Wafer
  4. China Dummy Research 2 Inch 6H-Semi Silicon Carbide Wafer

Dummy Research 2 Inch 6H-Semi Silicon Carbide Wafer

  1. MOQ: 5pcs
  2. Price: By case
  3. Get Latest Price
Payment Terms T/T, Western Union, MoneyGram
Supply Ability 1-50pcs/month
Delivery Time 1-6weeks
Packaging Details single wafer package in 100-grade cleaning room
Material SiC single crystal 6H-semi type
Grade Dummy
Thicnkss 0.33mmt
Suraface polished SSP
Application infrared optical research
Diameter 2 inch
color Green
resistivity >1E5 Ω.cm
Brand Name ZMKJ
Model Number 6H-semi
Place of Origin CHINA

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, MoneyGram Supply Ability 1-50pcs/month
Delivery Time 1-6weeks Packaging Details single wafer package in 100-grade cleaning room
Material SiC single crystal 6H-semi type Grade Dummy
Thicnkss 0.33mmt Suraface polished SSP
Application infrared optical research Diameter 2 inch
color Green resistivity >1E5 Ω.cm
Brand Name ZMKJ Model Number 6H-semi
Place of Origin CHINA
High Light 6H-Semi Silicon Carbide WaferDummy Research Silicon Carbide Wafer2 Inch Silicon Carbide Wafer

 

 2INCH 6H-semi Silicon Carbide sic Wafer 330um dummy research grade
Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal  

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description
 
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3  

4 inch n-doped 4H Silicon Carbide SiC Wafer

 High purity 4inch diameter Silicon Carbide (SiC) Substrate Specification
 

2inch diameter Silicon Carbide (SiC) Substrate Specification  
Grade Zero MPD Grade Production Grade Research Grade Dummy Grade  
 
Diameter 50.8 mm±0.2mm  
 
Thickness 330 μm±25μm   
 
Wafer Orientation Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI  
 
Micropipe Density ≤2 cm-2 ≤5 cm-2 ≤15 cm-2 ≤100 cm-2  
 
Resistivity 4H-N 0.015~0.028 Ω•cm  
 
6H-N 0.02~0.1 Ω•cm  
 
4/6H-SI ≥1E5 Ω·cm  
 
Primary Flat {10-10}±5.0°  
 
Primary Flat Length 18.5 mm±2.0 mm  
 
Secondary Flat Length 10.0mm±2.0 mm  
 
Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°  
 
Edge exclusion 1 mm  
 
TTV/Bow /Warp ≤10μm /≤10μm /≤15μm  
 
Roughness Polish Ra≤1 nm  
 
CMP Ra≤0.5 nm  
 
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm  
 
 
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%  
 
Polytype Areas by high intensity light None Cumulative area ≤2% Cumulative area ≤5%  
 
 
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length  
 
 
edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each  

 

 

6H-N 
 

 
6H-Semi 
 
 
CATALOGUE   COMMON  SIZE    
 

 

4H-N Type / High Purity  SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

 
4H Semi-insulating /  High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
 
 
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot

 
 Customzied size for 2-6inch 
 

 

FAQ

1. Are you trading company or manufacturer ?
A: We are trade company but we have own factory which is focus on sapphire and sic wafers. 

2 .Where are you? Can I visit you?
A: Sure,welcome to you visit our factory at any time.
 
3.How about the delivery time?
A: Within3-8 days after we confirm you requirement.
 
4.what kind of payment does your company support?
A: T/T, 100% L/C at sight, Cash, Western Union are all accepted if you have other payment,please contact us.

 

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...

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Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.sapphire-substrate.com/

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