SiC wafer SiC Epitaxial wafer 4H-N HPSI 6H-N 6H-P 3C-N for MOS or SBD

Product Specification

​SiC Substrate & Epi-wafer Product Portfolio Brief​​

We offer a comprehensive portfolio of high-quality silicon carbide (SiC) substrates and wafers, covering multiple polytypes and doping types (including 4H-N type [N-type conductive], 4H-P type [P-type conductive], 4H-HPSI type [High-Purity Semi-Insulating], and 6H-P type [P-type conductive]), with diameters ranging from 4-inch, 6-inch, 8-inch up to 12-inch. In addition to bare substrates, we provide high-value-added ​​epitaxial wafer growth services​​, enabling precise control over epi-layer thickness (1–20 µm), doping concentration, and defect density.

Each SiC substrate and epitaxial wafer undergoes rigorous in-line inspection (e.g., micropipe density <0.1 cm⁻², surface roughness Ra <0.2 nm) and comprehensive electrical characterization (such as CV testing, resistivity mapping) to ensure exceptional crystal uniformity and performance. Whether used for power electronics modules, high-frequency RF amplifiers, or optoelectronic devices (e.g., LEDs, photodetectors), our SiC substrate and epitaxial wafer product lines meet the most demanding application requirements for reliability, thermal stability, and breakdown strength.

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SiC Substrate: 4H-N Type Characteristics and Applications​​

The 4H-N type silicon carbide substrate maintains stable electrical performance and thermal robustness under high-temperature and high-electric-field conditions, owing to its ​​wide bandgap​​ (~3.26 eV) and ​​high thermal conductivity​​ (~370-490 W/m·K).

​​Core Characteristics:​​

• ​​N-Type Doping​​: Precisely controlled nitrogen doping yields carrier concentrations ranging from 1×10¹⁶ to 1×10¹⁹ cm⁻³ and room-temperature electron mobilities up to approximately 900 cm²/V·s, which helps minimize conduction losses.

• ​​Low Defect Density​​: The micropipe density is typically < 0.1 cm⁻², and the basal-plane dislocation density is < 500 cm⁻², providing a foundation for high device yield and superior crystal integrity.

• ​​Excellent Uniformity​​: The resistivity range is 0.01–10 Ω·cm, substrate thickness is 350–650 µm, with doping and thickness tolerances controllable within ±5%.

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Target Applications:​​

• Primarily used for ​​power electronic devices​​ such as SiC MOSFETs, Schottky diodes, and power modules, widely applied in electric vehicle drivetrains, solar inverters, industrial drives, and traction systems. Its properties also make it suitable for high-frequency RF devices in 5G base stations.

​​SiC Substrate: 4H Semi-Insulating Type Characteristics and Applications​​

The 4H Semi-Insulating SiC substrate possesses ​​extremely high resistivity​​ (typically ≥ 10⁹ Ω·cm), which effectively suppresses parasitic conduction during high-frequency signal transmission, making it an ideal choice for manufacturing high-performance radio frequency (RF) and microwave devices.

​​Core Characteristics:​​

• ​​Precision Control Techniques​​: Advanced crystal growth and processing techniques enable precise control over ​​micropipe density, single-crystal structure, impurity content, and resistivity​​, ensuring high purity and quality of the substrate.
• ​​High Thermal Conductivity​​: Similar to conductive SiC, it possesses excellent thermal management capabilities, suitable for high-power-density applications.
• ​​High Surface Quality​​: Surface roughness can achieve atomic-level flatness (Ra < 0.5 nm), meeting the requirements for high-quality epitaxial growth.

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Target Applications:​​

• Mainly applied in the ​​high-frequency RF field​​, such as power amplifiers in microwave communication systems, phased array radars, and wireless detectors.

SiC Epitaxial Wafer: 4H-N Type Characteristics and Applications​​

The homoepitaxial layer grown on the 4H-N type SiC substrate provides an ​​optimized active layer​​ for manufacturing high-performance power and RF devices. The epitaxial process allows precise control over layer thickness, doping concentration, and crystal quality.
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Core Characteristics:​​

• ​​Customizable Electrical Parameters​​: The ​​thickness​​ (typical range 5-15 µm) and ​​doping concentration​​ (e.g., 1E15 - 1E18 cm⁻³) of the epitaxial layer can be customized according to device requirements, with good uniformity.

• ​​Low Defect Density​​: Advanced epitaxial growth techniques (such as CVD) can effectively control the density of epitaxial defects like carrot defects and triangular defects, enhancing device reliability.

• ​​Inheritance of Substrate Advantages​​: The epitaxial layer inherits the excellent properties of the 4H-N type SiC substrate, including ​​wide bandgap​​, ​​high breakdown electric field​​, and ​​high thermal conductivity​​.

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Target Applications:​​

• It is the core material for manufacturing ​​high-voltage power devices​​ (such as MOSFETs, IGBTs, Schottky diodes), widely used in electric vehicles, renewable energy power generation (photovoltaic inverters), industrial motor drives, and aerospace fields.

About ZMSH

ZMSH plays a key role in the silicon carbide (SiC) substrate industry, focusing on the independent R&D and large-scale production of critical materials. Mastering core technologies spanning the entire process from crystal growth, slicing, to polishing, ZMSH possesses the industrial chain advantage of an integrated manufacturing and trading model, enabling flexible customized processing services for customers.

ZMSH can provide SiC substrates in various sizes from 2-inch to 12-inch diameters. The product types cover multiple crystal structures including 4H-N type, 6H-P type, 4H-HPSI (High-Purity Semi-Insulating) type, 4H-P type, and 3C-N type, meeting the specific requirements of different application scenarios.

FAQs about SiC Substrate Types​​

Q1: What are the three main types of SiC substrates and their primary applications?​​
​​A1:​​ The three primary types are ​​4H-N type (conductive)​​ for power devices like MOSFETs and EVs, ​​4H-HPSI (high-purity semi-insulating)​​ for high-frequency RF devices such as 5G base station amplifiers, and ​​6H type​​ which is also used in certain high-power and high-temperature applications.
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Q2: What is the fundamental difference between 4H-N type and semi-insulating SiC substrates?​​
​​A2:​​ The key difference lies in their ​​electrical resistivity​​; 4H-N type is conductive with low resistivity (e.g., 0.01-100 Ω·cm) for current flow in power electronics, while semi-insulating types (HPSI) exhibit extremely high resistivity (≥ 10⁹ Ω·cm) to minimize signal loss in radio frequency applications.

Q3: What is the key advantage of HPSI SiC wafers in high-frequency applications like 5G base stations?​​
​​A3:​​ HPSI SiC wafers provide ​​extremely high resistivity (>10⁹ Ω·cm)​​ and low signal loss, making them ideal substrates for GaN-based RF power amplifiers in 5G infrastructure and satellite communications.

Tags: #SiC wafer, #SiC Epitaxial wafer, #Silicon Carbide Substrate, #4H-N, #HPSI, #6H-N, #6H-P, #3C-N, #MOS or SBD, #Customized, #2inch/3inch/4inch/6inch/8inch/12inch