Silicon Carbide (SiC) Ceramic Tray​ semiconductor etching and photovoltaic wafer

Product Specification

Introduction Of SIC Ceramic Tray​​
​​

SIC Ceramic Tray​​ (Silicon Carbide Ceramic Tray) is a high-performance industrial carrier tool based on silicon carbide (SiC) material. It is widely used in semiconductor manufacturing, photovoltaics, laser processing, and other fields. Leveraging SiC's exceptional properties—such as high-temperature resistance, corrosion resistance, and high thermal conductivity—it serves as an ideal replacement for traditional materials like graphite and metals in advanced industrial scenarios.

Core Principles SIC Ceramic Tray​​
 

​​(1) Material Properties​​

​​High-Temperature Resistance​​: Melting point up to 2700°C, stable operation at 1800°C, suitable for high-temperature processes (e.g., ICP etching, MOCVD).
​​High Thermal Conductivity​​: 140–300 W/m·K (superior to graphite and sintered SiC), ensuring uniform heat distribution and minimizing thermal stress-induced deformation.
​​Corrosion Resistance​​: Resistant to strong acids (e.g., HF, H₂SO₄) and alkalis, avoiding contamination or structural damage.
​​Low Thermal Expansion​​: Thermal expansion coefficient (4.0×10⁻⁶/K) close to silicon, reducing warpage during temperature changes .

​​(2) Structural Design​​

​​High Purity & Density​​: SiC content ≥99.3%, porosity ≈0, formed via high-temperature sintering (2250–2450°C) to prevent particle shedding.
​​Customizable Sizes​​: Supports large diameters (e.g., φ600mm) and integrated features (vacuum holes, grooves) for wafer handling and vacuum sputtering

Key Applications SIC Ceramic Tray​​
​​

(1) Semiconductor Manufacturing​​

​​Wafer Processing​​: Used in ICP etching and CVD (Chemical Vapor Deposition) to stabilize wafer positioning.
​​MOCVD Equipment​​: Acts as a carrier for GaN (gallium nitride) growth in high-brightness LEDs, enduring 1100–1200°C temperatures .

​​(2) Photovoltaics​​

​​Silicon Crystal Growth​​: Replaces quartz crucibles in polycrystalline silicon production, tolerating melt temperatures >1420°C.

​​(3) Laser & Precision Machining​​

​​Etching/Cutting​​: Serves as a platform for laser-etched materials, resisting high-energy beam impacts.

​​(4) Chemical & Environmental Engineering​​

​​Corrosion-Resistant Equipment​​: Used in pipelines and reactors for aggressive fluid handling

Q&A​​ SIC Ceramic Tray
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Q1: How does SIC compare to graphite trays?​​
A: SIC withstands higher temperatures (1800°C vs. ~1000°C) and avoids coating delamination. Its thermal conductivity is 2–3× higher, reducing wafer warpage .

​​Q2: Can SIC trays be reused? Maintenance tips?​​
A: Yes, but avoid mechanical impacts and extreme temperatures. Clean residues with soft tools; store dry to prevent moisture absorption .

​​Q3: Common failure modes?​​
A: Cracking from thermal shock or mechanical stress. Pure CVD SiC trays resist warpage unless physically damaged .

​​Q4: Suitable for vacuum environments?​​
A: Yes. High purity and low outgassing make them ideal for vacuum sputtering and semiconductor etching .

​​Q5: How to select specifications?​​
A: Consider process temperature, load capacity, and compatibility (e.g., φ600mm trays for large wafers)

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