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SHANGHAI FAMOUS TRADE CO.,LTD

  • China,Shanghai ,Shanghai
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China 4H SiC Seed Wafer Thickness 600±50μm <1120> Customization Silicon Carbide Growth
China 4H SiC Seed Wafer Thickness 600±50μm <1120> Customization Silicon Carbide Growth

  1. China 4H SiC Seed Wafer Thickness 600±50μm <1120> Customization Silicon Carbide Growth
  2. China 4H SiC Seed Wafer Thickness 600±50μm <1120> Customization Silicon Carbide Growth
  3. China 4H SiC Seed Wafer Thickness 600±50μm <1120> Customization Silicon Carbide Growth
  4. China 4H SiC Seed Wafer Thickness 600±50μm <1120> Customization Silicon Carbide Growth
  5. China 4H SiC Seed Wafer Thickness 600±50μm <1120> Customization Silicon Carbide Growth

4H SiC Seed Wafer Thickness 600±50μm <1120> Customization Silicon Carbide Growth

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Delivery Time 2 weeks
Payment Terms 100%T/T
Supply Ability
Bow/Warp ≤50um
Resistivity High/Low Resistivity
Orientation On-Axis/Off-Axis
TTV ≤2um
Type 4H
Diameter 2inch 4inch 6inch 8inch
Particle Free/Low Particle
Material Silicon Carbide
Brand Name ZMSH
Model Number Silicon carbide seed wafer
Place of Origin China

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  1. Product Details
  2. Company Details

Product Specification

Delivery Time 2 weeks Payment Terms 100%T/T
Supply Ability Bow/Warp ≤50um
Resistivity High/Low Resistivity Orientation On-Axis/Off-Axis
TTV ≤2um Type 4H
Diameter 2inch 4inch 6inch 8inch Particle Free/Low Particle
Material Silicon Carbide Brand Name ZMSH
Model Number Silicon carbide seed wafer Place of Origin China
High Light Silicon Carbide SiC Seed WaferCustomization SiC Seed WaferSiC Seed Wafer for Growth

4H SiC Seed Wafer Thickness 600±50μm <1120> Customization Silicon carbide growth

Description of SiC Seed Wafer:

SiC seed crystal is actually a small crystal with the same crystal orientation as the desired crystal, which serves as the seed for growing a single crystal. It is also known as a crystal seed. By using seed crystals with different crystal orientations, crystals with different orientations can be obtained. Therefore, they are categorized based on their purposes: CZ-pulled single-crystal seed crystals, zone-melting seed crystals, sapphire seed crystals, and SiC seed crystals. In this issue, I will mainly share with you the production process of silicon carbide (SiC) seed crystals, including the selection and preparation of silicon carbide seed crystals, growth methods, thermodynamic properties, growth mechanisms, and growth control.

The Character of SiC Seed Wafer:

1. Wide band gap

2. High thermal conductivity

3. High critical breakdown field strength

4. High saturation electron drift rate

Form of SiC Seed Wafer:

Silicon carbide seed wafer
Polytype 4H
Surface orientation error 4°toward<11-20>±0.5º
Resistivity customization
Diameter 205±0.5mm
Thickness 600±50μm
Roughness CMP,Ra≤0.2nm
Micropipe Density ≤1 ea/cm2
Scratches ≤5,Total Length≤2*Diameter
Edge chips/indents None
Front laser marking None
Scratches ≤2,Total Length≤Diameter
Edge chips/indents None
Polytype areas None
Back laser marking 1mm (from top edge)
Edge Chamfer
Packaging Multi-wafer cassette

Physical photo of SiC Seed Wafer:

Applications of SiC Seed Wafer:

The silicon carbide seed crystal is used for preparing silicon carbide.

Silicon carbide single crystals are typically grown using the physical vapor transport method. The specific steps of this method involve placing silicon carbide powder at the bottom of a graphite crucible and positioning a silicon carbide seed crystal at the top of the crucible. The graphite crucible is then heated to the sublimation temperature of silicon carbide. The silicon carbide powder decomposes into vapor-phase substances such as Si vapor, Si2C, and SiC2. These substances sublime towards the top of the crucible under the influence of an axial temperature gradient. Upon reaching the top, they condense on the surface of the silicon carbide seed crystal, crystallizing into a silicon carbide single crystal.

The diameter of the seed crystal needs to match the desired crystal diameter. During growth, the seed crystal is fixed at the top of the crucible using an adhesive.

Application Picture of SiC Seed Wafer:

Packing and Shipping:

Product Recommend:

1.6inch Dia153mm 0.5mm monocrystalline SiC Silicon Carbide crystal seed Wafer or ingot

 

 

2.4h-N 100um Silicon Carbide Abrasive Powder For SIC Crystal Growth

 

 

 

 

 

 

Company Details

Bronze Gleitlager

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Bronze Sleeve Bushings

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Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...

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  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.sapphire-substrate.com/

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