Vacuum Coating Titanium Gr1 Sputtering Tube Targets 133OD*125ID*840L

Product Specification

Titanium Tube Target Titanium Gr1 ASTM B861-06 a 133OD*125ID*840L Vacuum Coating Target Sputtering

Materials technology development trend of the target material is closely related with the thin film technology development trend of the downstream application industry, along with the application of industry technical improvement on film products or components, the technology of target should be changed also, greatly to replace the original flat-panel display (FPD) in recent years, which is mainly composed of the cathode ray tube (CRT) computer monitors and television market. It will also greatly increase the technology and market demand of ITO target material. In addition to storage technology. The demand for high-density, large-capacity hard disks and high-density erasable discs continues to increase. All of these result in the change of the application industry's demand for target materials. Below we will introduce the main application fields of target materials and the development trend of target materials in these fields respectively.
Among all the application industries, the semiconductor industry has the most stringent quality requirements for target sputtering films. Today, 12-inch (300 epistaxis) silicon chips have been made. The interconnects are shrinking in width. Wafer manufacturers require large size, high purity, low segregation and fine grain, which requires better microstructure of the manufactured target. The crystal particle diameter and uniformity of target material have been considered as the key factors affecting the deposition rate of thin films. In addition, the purity of the film is greatly related to the purity of the target material. In the past, the purity of 99.995% (4N5) copper target may be able to meet the requirements of 0.35pm process of semiconductor manufacturers, but it can not meet the requirements of 0.25um process, and the 0.18um and even 0.13 m process. The purity of the target material required will be above 5 or even 6 N. Compared with aluminium, copper has higher resistance to electrical migration and lower resistivity, can meet! The conductor process is required for submicron wiring below 0.25um, but brings with it other problems: low adhesion strength of copper to organic dielectric materials. In addition, it is easy to react, which leads to corrosion and disconnection of the copper interconnect in the process of use. To solve these problems, a barrier layer needs to be placed between the copper and the dielectric layer. The barrier material generally uses metals and compounds with high melting point and high resistivity, so the barrier layer thickness is required to be less than 50 nm, and the adhesion performance with copper and dielectric materials is good. The barrier materials for copper interconnects and aluminium interconnects are different. New target materials need to be developed. The target material for the copper interconnect barrier layer includes Ta, W, TaSi, WSi, etc. But Ta and W are refractory metals. It is relatively difficult to make, and molybdenum, chromium and other gold is being studied as an alternative material.

Features

1. Low density and high strength
2. Customized according to the drawings required by customers
3. Strong corrosion resistance
4. Strong heat resistance
5. Low temperature resistance
6. Heat resistance